Allicdata Part #: | APT35GT120JU3-ND |
Manufacturer Part#: |
APT35GT120JU3 |
Price: | $ 13.70 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 55A 260W SOT227 |
More Detail: | IGBT Module Trench Field Stop Single 1200V 55A 260... |
DataSheet: | APT35GT120JU3 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 12.44770 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 55A |
Power - Max: | 260W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 35A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 2.53nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | ISOTOP |
Supplier Device Package: | SOT-227 |
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GT120JU3 is a molded insulated gate bipolar transistor (IGBT) module providing high power density and low switching losses. This module type utilizes the latest IGBT technology, offering high efficiency and low turn off time. GT120JU3 is suitable for use in motor control and in high power frequency converters.
The GT120JU3 has a built in insulated gate driver, providing a closed loop IGBT control over the full turn off current and temperature range to minimise turn-off losses. The driver interface integrated in the module also offers short circuit protection.
The GT120JU3 is designed for high input voltage and bus voltage applications. It has low internal capacitance and impedance, enabling fast switching frequency and improved control performance. The GT120JU3 is designed to achieve tight load regulation with minimal current ripple and voltage drop.
To ensure the IGBT module operates reliably and efficiently, the module offers integrated protection features including over temperature, over voltage and overtemperature protection. It also has active current sharing among paralleled devices, reducing stress on individual transistors and increasing system reliability.
GT120JU3 module is used in variety of applications, such as motor control, frequency converters and high voltage supplies. Its wide operating temperature range, high power density and low resistance make it suitable for both low and high voltage applications. The module also offer good reliability and cost savings over discrete components.
The working principle of GT120JU3 module is based on bipolar transistor technology. An insulated gate is used to control a large amount of power, by allowing only a very small amount of current to flow in the opposite direction. This current is referred to as the collector current, and it is controlled by the insulated gate driver within the module.
When the insulated gate is activated, it allows a high amount of current to flow from the collector terminal to the emitter terminal. This current is then used to turn the device on and off. The insulated gate is controlled by the driver circuitry and can be adjusted to control the gate voltage and the gate current, thus controlling the power delivered by the device.
The GT120JU3 module is also equipped with additional protection features such as over temperature and over voltage protection, as well as an active current sharing circuit which helps to reduce stress on individual transistors and ensure that the system is reliable and efficient. This module is therefore suitable for use in a variety of industrial applications, delivering high power density and low switching losses.
The specific data is subject to PDF, and the above content is for reference
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