APTC60AM24SCTG Allicdata Electronics
Allicdata Part #:

APTC60AM24SCTG-ND

Manufacturer Part#:

APTC60AM24SCTG

Price: $ 74.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 600V 95A SP4
More Detail: Mosfet Array 2 N Channel (Phase Leg) 600V 95A 462W...
DataSheet: APTC60AM24SCTG datasheetAPTC60AM24SCTG Datasheet/PDF
Quantity: 1000
100 +: $ 67.38100
Stock 1000Can Ship Immediately
$ 74.12
Specifications
Series: CoolMOS™
Packaging: Bulk 
Part Status: Active
FET Type: 2 N Channel (Phase Leg)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 95A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Power - Max: 462W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4
Description

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Transistors are the go-to semiconductor components for a wide range of applications. In particular, Field Effect Transistors (FETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are commonly used due to their low on resistance and good frequency characteristics. Array implementations of FETs and MOSFETs are especially beneficial for higher switch frequency and higher power applications.

APTC60AM24SCTG is a MOSFET array designed specifically for automotive applications. It consists of eight NMOS (N-Channel Metal Oxide Semiconductor) transistors in parallel. The device is offered in two versions: a standard version with a maximum junction temperature of 150°C and a high temperature version with a maximum junction temperature of 210°C.

APTC60AM24SCTG is a low-dropout (LDO) MOSFET array which allows for easy implementation of low voltage, low current applications. It is ideal for switching circuits and drive circuits in multiple automotive applications such as motors, displays, and lights. The device is designed to be robust in a wide range of operating conditions including vibration, electrostatic discharge (ESD), and high-power surges.

The device\'s low on-resistance is beneficial for current-sensing applications, as it enables more accurate current measurements. In addition, the device is designed to include protection features such as over-voltage protection, short-circuit protection, and reverse-drain protection. This helps to ensure greater reliability in the application.

APTC60AM24SCTG is based on N-channel MOSFET technology. An N-channel MOSFET is a type of field effect transistor that can be used to control the flow of current in a circuit. The source and the drain of the MOSFET are the two terminals that control the flow of current. The gate terminal is the control terminal, which is held at a specific voltage to open or close the circuit. When the voltage at the gate terminal is above a certain value, it will cause the source and the drain to be connected and allow current to flow. The current through the MOSFET is proportional to the voltage applied to the gate.

The APTC60AM24SCTG is designed to consume less power than other comparable devices. The device features a low gate drive threshold, allowing the device to turn on with lower gate voltage. This reduces the amount of power required to drive the device and thus helps to increase the overall efficiency of the system.

APTC60AM24SCTG is a highly reliable device and is ideal for automotive applications. The device features a wide range of protection features which helps to ensure greater reliability in the application. The device is also highly efficient in terms of power consumption, making it suitable for a variety of applications requiring low voltage, low current operation.

The specific data is subject to PDF, and the above content is for reference

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