APTC90AM60T1G Allicdata Electronics
Allicdata Part #:

APTC90AM60T1G-ND

Manufacturer Part#:

APTC90AM60T1G

Price: $ 47.97
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 900V 59A SP1
More Detail: Mosfet Array 2 N-Channel (Half Bridge) 900V 59A 46...
DataSheet: APTC90AM60T1G datasheetAPTC90AM60T1G Datasheet/PDF
Quantity: 1000
100 +: $ 43.60970
Stock 1000Can Ship Immediately
$ 47.97
Specifications
Series: CoolMOS™
Packaging: Tray 
Part Status: Last Time Buy
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 59A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
Power - Max: 462W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Description

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APTC90AM60T1G is an array of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). It is a relatively new type of transistor that has been designed to handle large voltages and currents, and has significant advantages over traditional transistors. This article will explore the application field and working principle of the APTC90AM60T1G.

Application Field

The APTC90AM60T1G is a dual gate MOSFET array, and is most suitable for power applications. It is typically used in power switches and DC-DC converters, as well as other solutions requiring high voltage switching. It is commonly used as an overcurrent protection element, because of its high surge capability. It can also be used in motor control and automation applications, due to its high output current capacity. Additionally, it can be used in a variety of other applications, including computers, telecom equipment, load cells, and more. Due to its high power dissipation and low on-resistance, it is a great choice for a wide range of applications.

Working Principle

The APTC90AM60T1G is a dual-gate MOSFET array, meaning that it consists of two independent MOSFETs connected in series. Each MOSFET has a source, drain, and gate, which can be independently controlled. When both gates are off, the device will be off and no current will flow. When one of the gates is turned on, current will flow from the source to the drain. The amount of current that flows is determined by the gate voltage and the drain-source resistance. When both gates are turned on, the current will be larger than when one is turned on, due to the increased resistance. Additionally, the current can be modulated by changing the gate voltage, allowing for precise control of the current.

The APTC90AM60T1G is an excellent choice for power applications, due to its high current capacity and its ability to handle high voltages. The two independent MOSFETs offer redundancy, and the ability to alter the gate voltage allows for fine-tuned control of whatever device it is connected to. It is a great choice for motor control and other power applications.

The specific data is subject to PDF, and the above content is for reference

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