APTC60DSKM70T1G Allicdata Electronics
Allicdata Part #:

APTC60DSKM70T1G-ND

Manufacturer Part#:

APTC60DSKM70T1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 600V 39A SP1
More Detail: Mosfet Array 2 N Channel (Dual Buck Chopper) 600V ...
DataSheet: APTC60DSKM70T1G datasheetAPTC60DSKM70T1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: CoolMOS™
Packaging: Tray 
Part Status: Obsolete
FET Type: 2 N Channel (Dual Buck Chopper)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Description

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The APTC60DSKM70T1G is a high performance power MOSFET array designed for applications requiring high power density, low on-resistance, avalanche capability, and low gate drive power.

The transistor array consists of 1 - 60 individual Power MOSFETs in a SO-8 package. The drain pins of the individual MOSFETs are connected to the source pins of the neighbouring MOSFETs forming a continuous array. A single gate pin controls the entire array. This allows for a highly efficient design and simplifies the system design. The MOSFET array provides low on-resistance for both the source and drain pins, a low gate threshold voltage, and a low gate to source capacitance. The array also has high avalanche robustness for both on-resistance and gate charge.

The APTC60DSKM70T1G is suitable for a wide range of applications including Power Converters, Automotive, Industrial, Server, High Voltage DC-DC Converters, and Battery Management. In automotive applications, the transistor array is used to control power conversion systems. It can also be used in industrial applications to control high voltage systems. In server applications, the transistor array provides high-efficiency power conversion. The low on-resistance and low gate threshold voltage make the APTC60DSKM70T1G a suitable choice for battery management systems.

The working principle of the APTC60DSKM70T1G is quite simple. By applying a positive voltage to the gate terminal, the MOSFET array will be electrically connected to its load. The voltage applied to the gate terminal will determine the amount of current that flows through the array. If the gate voltage is increased, the current will increase. If the gate voltage is decreased, the current will decrease. The advantages of using this transistor array is that it provides a high power density, low on-resistance, avalanche capability, and low gate drive power.

In summary, the APTC60DSKM70T1G is a high performance power MOSFET array designed for applications requiring high power density, low on-resistance, avalanche capability, and low gate drive power. It is suitable for a wide range of applications including Power Converters, Automotive, Industrial, Server, High Voltage DC-DC Converters, and Battery Management. It works by applying a positive voltage to the gate terminal which determines the amount of current that flows through the array. The advantages of using this transistor array are its high power density, low on-resistance, avalanche capability, and low gate drive power.

The specific data is subject to PDF, and the above content is for reference

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