APTC90AM602G Allicdata Electronics
Allicdata Part #:

APTC90AM602G-ND

Manufacturer Part#:

APTC90AM602G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 900V 59A SP2
More Detail: Mosfet Array 2 N-Channel (Half Bridge) 900V 59A 46...
DataSheet: APTC90AM602G datasheetAPTC90AM602G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: CoolMOS™
Packaging: Tray 
Part Status: Obsolete
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 59A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
Power - Max: 462W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP2
Supplier Device Package: SP2
Description

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APTC90AM602G is a commonly used application field and working principle, primarily used for array solutions for SiC power semiconductor applications. It is important to understand the array solutions for SiC power semiconductor applications, as this is 1 of the latest technologies that is being developed for the the field of electrical engineering and power management.

A SiC power semiconductor devices power is rated at slightly higher voltages and temperatures than conventional transistors and MOSFETs. The APTC90AM602G is a high-speed power semiconductor device, which is a perfect choice for applications that require high speed, low resistive power loss, and minimal switching inductance and resistance. The array solutions for SiC power semiconductor applications provide excellent low on-state resistance and fast switching speed, which makes this device suitable for many industrial and automotive applications.

In terms of the working principle, the APTC90AM602G is a integrated power device, with a topology of N-Channel MOSFETs connected in series on the source side, and with two integrated bi-directional ESD protection diodes.

These bi-directional ESD diodes used on the source side of the APTC90AM602G provide protection from electrical surge and can protect the device from high current flow from either direction. Additionally, the N-Channel MOSFETs used in the APTC90AM602G are not just used for their electrical surge protection capabilities. They also play an important role in the device’s thermal and electrical management capabilities.

In terms of its electrical management capabilities, the APTC90AM602G includes a protection circuit for over-voltage, over-current and reverse current protection. This is extremely important in tasks such as high power switching, where current and control is important. The protection circuit is able to detect any over-voltage and over-current conditions and respond accordingly, allowing the device to keep the output power under control and prevent any exceeding current or voltage levels.

The thermal management capabilities of the APTC90AM602G are quite impressive as well. This device is designed with a built-in thermal management system, which is able to detect any temperature issues that may occur during operation. It is also designed with an efficient heat dissipation mechanism, which helps to keep the device cool and maintain efficient operation.

The APTC90AM602G is a great option for applications which require a high-speed, low resistive power loss, and excellent thermal and electrical management capabilities. Its integrated bi-directional ESD protection diodes and N-Channel MOSFETs give it robust protection against electrical surge and makes it able to manage current and temperatures efficiently.

The specific data is subject to PDF, and the above content is for reference

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