APTC60VDAM45T1G Allicdata Electronics
Allicdata Part #:

APTC60VDAM45T1G-ND

Manufacturer Part#:

APTC60VDAM45T1G

Price: $ 29.75
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 600V 49A SP1
More Detail: Mosfet Array 2 N-Channel (Dual) 600V 49A 250W Chas...
DataSheet: APTC60VDAM45T1G datasheetAPTC60VDAM45T1G Datasheet/PDF
Quantity: 1000
100 +: $ 27.04700
Stock 1000Can Ship Immediately
$ 29.75
Specifications
Series: CoolMOS™
Packaging: Tray 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Description

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<div align="justify"><span style="font-size:14px;">APTC60VDAM45T1G is a high-voltage, high-speed, and low-power MOSFET array developed by Alpha &amp; Omega Semiconductor. It is widely used in switching power supplies, motor control, lighting control, and solenoid control. This product offers a wide range of features such as high voltage, low on-resistance, high off-state leakage, low switching loss and excellent thermal performance.</span></div><div><br/></div><div align="justify"><span style="font-size:14px;">APTC60VDAM45T1G is an N-channel power MOSFET array consisting of 4 independent p-channel and 4 n-channel MOSFETs. These MOSFETs are all internally connected in a switch configuration and are designed to be used in a single package. The device offers a low on-resistance of 6 ohms, a low off-state leakage of 7.5 uA, a high switching speed of 100 V/usec, and a low voltage of 6 V. In addition, it has an excellent thermal performance and excellent protection features such as over-temperature and over-current protection.</span></div><div><br/></div><div align="justify"><span style="font-size:14px;">The working principle of the APTC60VDAM45T1G is based on the operation of MOSFETs. The four p-channel MOSFETs form a switch configuration, while the four n-channel MOSFETs form the second switch in the configuration. The gates of the MOSFETs are driven by an external signal and the source terminals are connected to the load. The operating voltage of the MOSFET is equal to the voltage applied to the gate terminal and the current flows only when the voltage is greater than or equal to the threshold voltage of the MOSFETs.</span></div><div><br/></div><div align="justify"><span style="font-size:14px;">The APTC60VDAM45T1G is ideal for applications such as switching power supplies, motor control, lighting control, and solenoid control. These applications require a high-speed switching time and low on-resistance. The APTC60VDAM45T1G is also commonly used in the automotive industry for automotive battery packs, DC/DC converters, active power factor correction, etc.</span></div><div><br/></div><div align="justify"><span style="font-size:14px;">In conclusion, the APTC60VDAM45T1G is a high-voltage, high-speed, and low-power MOSFET array that is suitable for a wide range of applications. It offers a wide range of features such as high voltage, low on-resistance, high off-state leakage, low switching loss and excellent thermal performance.</span></div>

The specific data is subject to PDF, and the above content is for reference

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