APTC80DA15T1G

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The APTC80DA15T1G is a silicon epitaxial N-channel MOSFET designed for high reliability, high voltage power switching applications. The device features a robust construction, high voltage and current ratings, and a high operating temperature range. In addition, the device features low reverse transfer capacitance, low on-resistance, high frequency operation, and low input capacitance.

The device is a Part of a family of products designed specifically for the most demanding power switching applications. This includes automotive, industrial, and consumer applications. The device is capable of operating up to +150°C junction temperature, making it suitable for use in demanding applications found in automotive, industrial, and consumer products.

The device is designed for operation as either a normally-off or normally-on MOSFET. A low gate-source threshold voltage is provided for better device conduction in either the saturation or cut-off regions. This makes the device suitable for use in a wide variety of switching applications, including high-power general purpose, motor drive, and thyristor commutation applications.

The device features a high breakdown voltage of 250V, and a drain current capability of 18A. Additionally, the device features a low on-resistance of 0.84Ω and a fast switching speed of 0.6ns. This makes the device suitable for high-speed switching applications. The device also features a low input capacitance of 6pF, making it suitable for low power applications.

The device features a robust construction with a 4-layer metal gate structure, which provides excellent temperature and voltage stability. Additionally, the device features a monolithic structure which provides a high current carrying capacity. The device also features a flexible bonding process which provides low parasitic inductance and resistance.

The APTC80DA15T1G is ideal for high voltage power applications in automotive, industrial, consumer and military systems. The device also features high current and voltage ratings, low on-resistance, fast switching speed and low input capacitance.

The working principles of the APTC80DA15T1G device involve two transistors in a single package. The first transistor is the main power transmitter, which has its conductance controlled by a gate voltage. This gate voltage modulates the current flow through the device. The second transistor is a diode connected in reverse. This transistor serves as a current limiter. It limits the amount of current that is allowed to flow through the device.

When an input voltage is applied to the gate of the main power transistor, it begins to turn on and allow current to flow through the device. As the input voltage is increased, the conductance of the device increases and more current is allowed to flow. As the input voltage is decreased, the conductance of the device is reduced and less current is allowed to flow. The diode connected in reverse limits the amount of current that is allowed to flow through the device, thus protecting the circuit from over-currents.

The APTC80DA15T1G device is a high voltage, high reliability device designed specifically for applications in automotive, industrial, and consumer systems. It features a monolithic construction and a robust gate structure, providing excellent temperature and voltage stability. Additionally, it features a flexible bonding process which provides low parasitic inductance and resistance. The device is suitable for high power, high frequency, and thyristor commutation applications with its low gate-threshold voltage and low on-resistance.

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