| Allicdata Part #: | APTC60DSKM70CT1G-ND |
| Manufacturer Part#: |
APTC60DSKM70CT1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | MOSFET 2N-CH 600V 39A SP1 |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 600V 39A 250W Chas... |
| DataSheet: | APTC60DSKM70CT1G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | CoolMOS™ |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Super Junction |
| Drain to Source Voltage (Vdss): | 600V |
| Current - Continuous Drain (Id) @ 25°C: | 39A |
| Rds On (Max) @ Id, Vgs: | 70 mOhm @ 39A, 10V |
| Vgs(th) (Max) @ Id: | 3.9V @ 2.7mA |
| Gate Charge (Qg) (Max) @ Vgs: | 259nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 7000pF @ 25V |
| Power - Max: | 250W |
| Operating Temperature: | -- |
| Mounting Type: | Chassis Mount |
| Package / Case: | SP1 |
| Supplier Device Package: | SP1 |
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The APTC60DSKM70CT1G is an array of FETs (Field-Effect Transistor) that is most commonly used in negative feedback amplifier systems. FETs are sophisticated semiconductor devices that have been around for decades, and are the choice over traditional bipolar transistors for applications requiring low power consumption and high performance.
The APTC60DSKM70CT1G has a total of four transistors in its array, all made from Silicon (Si). These four transistors are arranged in a manner such that they are able to function as either an amplifier or an oscillator, depending on the signal input.
The APTC60DSKM70CT1G has two p-type MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and two n-type. These transistors are arranged in a parallel configuration, which enables it to amplify both AC and DC signals. The output stage is typically configured to operate between 3.3V and 18V, depending on the application.
The operation of the APTC60DSKM70CT1G relies on the Gate-Source Voltage (VGs). When positive current is applied to the Gate-Source terminal, an electric field is created between the gate and the source of the MOSFET. This electric field increases the conductivity between the source and the drain, thus allowing current to flow from the source to the drain.
The high conductivity between the source and the drain channel causes the output voltage of the APTC60DSKM70CT1G to be equal to the voltage applied to the Gate-Source terminal. This allows for the APTC60DSKM70CT1G to be controlled by the voltage applied to the Gate-Source terminal and makes it ideal for low power applications.
The APTC60DSKM70CT1G is mostly used in applications that require low power consumption, high speed switching, and fast response times. It is often used in audio systems, power supplies, and radio receivers. It is also commonly found in industrial control systems, such as programmable logic controllers used to automate processes.
The APTC60DSKM70CT1G brings many advantages over traditional bipolar transistors by offering a higher switching speed, lower power consumption, and more reliable operation. Furthermore, its fast response time and wide operating range makes it a preferred choice in many applications.
The specific data is subject to PDF, and the above content is for reference
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APTC60DSKM70CT1G Datasheet/PDF