APTC60AM83BC1G Allicdata Electronics
Allicdata Part #:

APTC60AM83BC1G-ND

Manufacturer Part#:

APTC60AM83BC1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 3N-CH 600V 36A SP1
More Detail: Mosfet Array 3 N Channel (Phase Leg + Boost Choppe...
DataSheet: APTC60AM83BC1G datasheetAPTC60AM83BC1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: CoolMOS™
Packaging: Tray 
Part Status: Obsolete
FET Type: 3 N Channel (Phase Leg + Boost Chopper)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 36A
Rds On (Max) @ Id, Vgs: 83 mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Description

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The APTC60AM83BC1G is an array of transistor-based field effect transistors (FETs). FETs are three-terminal devices capable of providing current gain and power amplification and are commonly used in both digital and analog applications. The APTC60AM83BC1G is configured as a MOSFET array, meaning it operates without a gate insulation layer between the gates and the drain and source terminals. This allows for higher current gain than with regular FETs.

The APTC60AM83BC1G is designed to be used in applications such as motor speed control, motor driver circuits, and power switching. These applications require precision current and voltage control, as well as low gate-to-source voltage and a wide dynamic range. The APTC60AM83BC1G is capable of providing this level of precision and control along with very low power consumption.

The APTC60AM83BC1G is a low-voltage, high-current array of FETs featuring an insulated gate for each FET. Each FET in the array has its own gate, which is insulated from the other FETs, allowing for low cross-talk and low input capacitance. This allows the APTC60AM83BC1G to operate at higher frequencies than regular FETs.

The APTC60AM83BC1G also features power-saving circuitry, which ensures low power consumption even when the array is operating at full load. This circuitry contains both an on/off switch and an auto-shutdown function. The auto-shutdown function will automatically disable the FETs when the load is reduced below a certain threshold, thus conserving power.

The working principle of the APTC60AM83BC1G is based on the field effect transistor. A FET is a three-terminal device composed of a source, gate, and drain and functions similarly to a switch. When the gate voltage is high and the source voltage is low, current can flow from the source to the drain, thus allowing the FET to act as a switch. By varying the gate voltage, the FET can be switched from its "on" to its "off" position, regulating current flow.

By switching the FETs in the APTC60AM83BC1G array on and off, it is possible to control both the current and the voltage of the circuit. This is the central operating principle of the APTC60AM83BC1G array and its use in motor speed control, motor driver circuits, and power switching applications.

The APTC60AM83BC1G is a versatile and powerful array of transistor-based field effect transistors, ideal for use in motor speed control, motor driver circuits, and power switching applications. Its insulated gate FET configuration, low power consumption, and power-saving circuitry make it especially well-suited for applications where precision, frequency control, and extreme operating temperatures are required.

The specific data is subject to PDF, and the above content is for reference

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