APTC60BBM24T3G

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APTC60BBM24T3G is a high-voltage, low-leakage N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) array. It features an integrated LE (low-emitter) on-state current limiting resistor. It offers superior efficiency and low-voltage operation capabilities. The APTC60BBM24T3G can be used as a high-frequency switching device and in boosting applications.

The APTC60BBM24T3G can be used in various applications, such as switching and level-shifting, pre-driver power management, and pulse width modulation (PWM) applications. This component can be used in automotive applications, such as traditional DC-DC converters and LED lighting. It is also suitable for military and aerospace applications.

The APTC60BBM24T3G is a three-pin, through-hole device with a three-terminal integrated light-emitting diode (LED) in the same package. Each terminal consists of an isolated drain, an isolated source and a gate connected to its own series resistor. The on-state voltage of this device is typically 7V, with a maximum resistance of 1.4 ohms. It has a maximum allowable power dissipation of 300 mW.

The working principle of the APTC60BBM24T3G is based on the field-effect transistor (FET) effect. FETs are three-terminal semiconductor devices in which the current flowing through the source-drain channel is controlled by the voltage applied to the gate. The FET effect results from the electrical field produced when the gate voltage is applied, causing the depletion region to pinch off the source-drain channel. This allows current to be shut off, which is done when the voltage on the gate is opposite to that on the drain.

In the case of the APTC60BBM24T3G, the LED connected to the gate of the FET is used to control the current flowing through the device. The LED is usually triggered by a photo-diode that adjusts the resistance of the LED and thus the voltage on the gate. This makes the APTC60BBM24T3G suitable for high-frequency switching applications, as the LED can be triggered instantaneously.

The APTC60BBM24T3G is a versatile low-leakage, low-voltage MOSFET array component ideal for a wide range of applications. Its integrated LED enables the component to be used for high-frequency switching, LED lighting and boost applications.

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