APTC60DDAM70CT1G Allicdata Electronics
Allicdata Part #:

APTC60DDAM70CT1G-ND

Manufacturer Part#:

APTC60DDAM70CT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 600V 39A SP1
More Detail: Mosfet Array 2 N-Channel (Dual) 600V 39A 250W Chas...
DataSheet: APTC60DDAM70CT1G datasheetAPTC60DDAM70CT1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: CoolMOS™
Packaging: Bulk 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Description

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APTC60DDAM70CT1G is an advanced p-channel MOSFET array which is designed to provide excellent switching performance in the most demanding circuit designs. It has been designed by Fujitsu, a major Japanese electronics manufacturer, to offer a reliable and robust data transfer solution for high speed and low noise applications. The array is composed of 60 identical MOSFET cells, with each cell comprising a complementary pair of n- and p-channel MOSFETs. That structure allows the device to provide an economical and reliable solution for switching heavy loads and transferring data at high speeds.

The main advantage of this array is its improved switching speed. Each cell has a low drain source on resistance (RDS-on) of 0.6 ohms at 10V, enabling it to switch the load quickly and efficiently. Additionally, the MOSFETs have a low parasitic capacitance and a high switching speed, making it ideal for use in digital and analog circuits. The array also has a wide operating voltage range (1V to 17V) and a low gate charge, allowing it to respond faster to switching signals.

In terms of its application field, the APTC60DDAM70CT1G array is suitable for a variety of applications such as switching power supplies, solid state relays and digital circuits. It can also be used in multiplexers, data converters and amplifiers. In addition, the array is well-suited for use in high frequency RF circuits, where its low gate capacitance and exceptional switching speed provide advantages over traditional FET arrays. The array is also suitable for use in medical and automotive applications, thanks to its low gate charge and low reverse body diode Capacitance-Voltage characteristics.

The APTC60DDAM70CT1G array works on the principle of field effect transistors (FETs). It consists of an array of 60 small FET cells that can be switched on or off in response to a control signal. When a cell is switched off, the source connected to it is disconnected from the drain, effectively preventing any current flow through the circuit. By applying a control signal to the gate of the cell, the source-drain resistance can be controlled in order to control the current flow through the circuit. In this way, the array can be used to control the current flow through a device or circuit.

Overall, the APTC60DDAM70CT1G array is a reliable and robust data transfer solution for high speed and low noise applications. Its low RDS-on, low gate capacitance and high switching speed make it well-suited for multiplexers, data converters, amplifiers and power supplies, as well as medical and automotive applications. Additionally, its wide operating voltage range and low gate charge provide fast response to received switching signals.

The specific data is subject to PDF, and the above content is for reference

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