APTCV60TLM24T3G

Series:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	Three Level Inverter
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	100A
Power - Max:	250W
Vce(on) (Max) @ Vge, Ic:	1.9V @ 15V, 75A
Current - Collector Cutoff (Max):	250µA
Input Capacitance (Cies) @ Vce:	4.62nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	SP3

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Introduction

An APTCV60TLM24T3G is a type of IGBT (Insulated Gate Bipolar Transistor) module. IGBT modules are a type of power semiconductor module consisting of multiple insulated gate bipolar transistors. They are used in various applications, including motor control, power conversion, switching, and protection. The APTCV60TLM24T3G has the following characteristics: low on-resistance, low on-capacitance, and low-power loss.

Application Fields of APTCV60TLM24T3G

The APTCV60TLM24T3G is an ideal choice for many applications. It can be used in applications requiring switching, rectification, protection and voltage regulation. These applications include motor control, inverter, and solar energy solutions.The APTCV60TLM24T3G is suitable for applications requiring high power, fast switching speed, and high efficiency. It is also ideal for applications in harsh service environments, such as aerospace, automotive, and industrial automation.

Working Principles of APTCV60TLM24T3G

The APTCV60TLM24T3G is an IGBT module, which utilizes the principle of bipolar switch technology. This technology utilizes the two main components of an IGBT module - the collector and the emitter. The collector and emitter are linked together by an insulated layer, which is called the gate insulation. The gate insulation controls the flow of current between the collector and the emitter, allowing the current to flow in either direction. The current flow is regulated by the amount of voltage in the gate. When the voltage in the gate is low, the current between the collector and emitter is blocked, controlling the flow of current. When the voltage in the gate is high, the current between the collector and emitter is allowed to flow, allowing current to flow in either direction.

Conclusion

The APTCV60TLM24T3G module is a type of IGBT module that has low on-resistance, low on-capacitance, and low-power loss. This makes it ideal for applications requiring switching, rectification, protection and voltage regulation. The APTCV60TLM24T3G is suitable for high power and fast-switching applications, as well as for applications in harsh environments. The working principle of the APTCV60TLM24T3G utilizes the principles of bipolar switch technology, where the gate insulation controls the flow of current between the collector and emitter.

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