APTC60SKM24T1G Allicdata Electronics
Allicdata Part #:

APTC60SKM24T1G-ND

Manufacturer Part#:

APTC60SKM24T1G

Price: $ 29.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 600V 95A SP1
More Detail: N-Channel 600V 95A (Tc) 462W (Tc) Chassis Mount SP...
DataSheet: APTC60SKM24T1G datasheetAPTC60SKM24T1G Datasheet/PDF
Quantity: 1000
100 +: $ 26.68080
Stock 1000Can Ship Immediately
$ 29.35
Specifications
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Package / Case: SP1
Supplier Device Package: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 462W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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APTC60SKM24T1G is a kind of Enhancement Mode Power MOSFET, belongs to single-effect field effect transistor. It can be used for low frequency field effect devices, such as motor control, power switch and so on.

APTC60SKM24T1G is a kind of power FET, which is based on the enhancement-type structure. Its drain-source blocking capability is mainly determined by the application of the gate-source and substrate-source insulation layer. Its switching characteristics are determined by the applied voltage, and its conduction characteristics are determined by the channel length and channel width of the device.

APTC60SKM24T1G has excellent performance, and its current rating is high. Its effective breakdown voltage is 24V and its maximum continuous drain current is 6A. It also has a high rise time, low drive resistance and less power loss.

The main purpose of APTC60SKM24T1G is to use it as a power switch in low power applications, such as motor control, power regulation, and power converter. It is also applicable to low voltage DC/DC converters, voltage converters, motor control, automotive systems, etc.

The working principle of APTC60SKM24T1G lies in the close connection between its gate and drain, which means that a small voltage can generate a large current. The gate of this device acts as an electric field effect transistor (MOSFET), which is an insulated gate control device. This means that when a voltage is applied to the gate-source, a voltage across the substrate-source will be caused, effectively creating a conductive channel between the drain and the source, allowing current flow through it.

By changing the voltage applied to the gate-source, the voltage across the substrate-source can also be adjusted accordingly, thus controlling the current flow. The amount of current it can conduct depends on the size of the conductive channel created. Moreover, APTC60SKM24T1G has a fast switching speed which is essential for motor control and power regulation.

In conclusion, APTC60SKM24T1G is a useful power FET for low power applications such as motor control, power regulation, and power converters. It is designed based on the enhancement-type structure and has excellent performance with a fast switching speed. Its main purpose is to use it as a power switch in low power applications and stands out with its current rating, breakdown voltage, rise time and low drive resistance.

The specific data is subject to PDF, and the above content is for reference

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