APTC90DAM60T1G Allicdata Electronics
Allicdata Part #:

APTC90DAM60T1G-ND

Manufacturer Part#:

APTC90DAM60T1G

Price: $ 32.85
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 900V 59A SP1
More Detail: N-Channel 900V 59A (Tc) 462W (Tc) Chassis Mount SP...
DataSheet: APTC90DAM60T1G datasheetAPTC90DAM60T1G Datasheet/PDF
Quantity: 1000
100 +: $ 29.86480
Stock 1000Can Ship Immediately
$ 32.85
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Package / Case: SP1
Supplier Device Package: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 462W (Tc)
FET Feature: Super Junction
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tray 
Description

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APTC90DAM60T1G Application Field and Working Principle

The APTC90DAM60T1G is a part of a family of high-frequency power MOSFETs. It is designed to be used in various applications such as high-frequency switching, power amplifiers and power converters. This device can be used as a driver as well as an output device. With its excellent performance in high frequency operation, it can be used in wide range of power applications.

Application Fields

Because of its excellent performance in high frequency operation, the APTC90DAM60T1G is most commonly used as a driver as well as an output device in high-frequency switching and class D amplifiers, power inverters, and transducers and audio. Also, it is being used in motor controls, digital signal processing and wireless communication. And due to its strong performance, it is also used in the industrial equipment and DC-DC converters.

Working Principle

The device uses an insulated heat spreader and a package with a low thermal resistance. This allows the device to handle high levels of power and increases its power-handling capabilities. The device also includes built-in protection circuits which help it to protect itself from over-current, short-circuit and thermal failures. The device is also built with high-speed switching technology, allowing it to operate at high cut-off frequency and providing a high level of power conversion efficiency.

In order to operate at its maximum efficiency, the device must be connected to the power source. This is usually done by connecting the source to the drains. The source voltage is then increased or decreased in order to control the device\'s operation. Then, the gate voltage is controlled in order to adjust the conductivity of the channel and therefore the current flow through the channel.

Conclusion

In conclusion, the APTC90DAM60T1G is a high-frequency power MOSFET that can be used in a wide range of applications. It offers excellent performance in high frequency operation and provides protection against over-current, short-circuit and thermal failures. With its strong performance, it is suitable for many different power applications.

The specific data is subject to PDF, and the above content is for reference

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