
Allicdata Part #: | APTC90DAM60T1G-ND |
Manufacturer Part#: |
APTC90DAM60T1G |
Price: | $ 32.85 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 900V 59A SP1 |
More Detail: | N-Channel 900V 59A (Tc) 462W (Tc) Chassis Mount SP... |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 29.86480 |
Vgs(th) (Max) @ Id: | 3.5V @ 6mA |
Package / Case: | SP1 |
Supplier Device Package: | SP1 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 462W (Tc) |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 13600pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 540nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 52A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 59A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tray |
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APTC90DAM60T1G Application Field and Working Principle
The APTC90DAM60T1G is a part of a family of high-frequency power MOSFETs. It is designed to be used in various applications such as high-frequency switching, power amplifiers and power converters. This device can be used as a driver as well as an output device. With its excellent performance in high frequency operation, it can be used in wide range of power applications.
Application Fields
Because of its excellent performance in high frequency operation, the APTC90DAM60T1G is most commonly used as a driver as well as an output device in high-frequency switching and class D amplifiers, power inverters, and transducers and audio. Also, it is being used in motor controls, digital signal processing and wireless communication. And due to its strong performance, it is also used in the industrial equipment and DC-DC converters.
Working Principle
The device uses an insulated heat spreader and a package with a low thermal resistance. This allows the device to handle high levels of power and increases its power-handling capabilities. The device also includes built-in protection circuits which help it to protect itself from over-current, short-circuit and thermal failures. The device is also built with high-speed switching technology, allowing it to operate at high cut-off frequency and providing a high level of power conversion efficiency.
In order to operate at its maximum efficiency, the device must be connected to the power source. This is usually done by connecting the source to the drains. The source voltage is then increased or decreased in order to control the device\'s operation. Then, the gate voltage is controlled in order to adjust the conductivity of the channel and therefore the current flow through the channel.
Conclusion
In conclusion, the APTC90DAM60T1G is a high-frequency power MOSFET that can be used in a wide range of applications. It offers excellent performance in high frequency operation and provides protection against over-current, short-circuit and thermal failures. With its strong performance, it is suitable for many different power applications.
The specific data is subject to PDF, and the above content is for reference
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