AS4C128M16D2-25BCNTR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - DDR2
Memory Size:	2Gb (128M x 16)
Clock Frequency:	400MHz
Write Cycle Time - Word, Page:	15ns
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.9 V
Operating Temperature:	0°C ~ 85°C (TC)
Mounting Type:	Surface Mount
Package / Case:	84-TFBGA
Supplier Device Package:	84-FBGA (10.5x13.5)

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AS4C128M16D2-25BCNTR Memory Description

AS4C128M16D2-25BCNTR (AS4C128M16D2-25BCNTR) is a high-speed and low-power memory integrated circuit (IC) manufactured by Alliance Memory. The device is based on the All-Flash architecture and it has a Fast SRAM cell structure. The device has a 1.8 V supply voltage with a temperature range from 0°C to 85°C. It is designed for use in portable, handheld, and automotive applications where a wide operating temperature range and low power operation are essential.

Features

• 128 Mbits of Non-volatile Memory
• Single Chip SRAM
• Supports up to 133 MHz Operation
• Operates at 1.8 V
• Extremely Low Power Consumption
• Wide Operating Temperature Range
• 16 Gbit memory array
• 2 DWORDs of on-die ECC
• Low voltage commands and Auto-Refresh
• Supports multiplexed Parity and ECC error checking
• Built-in self-timed array initialization
• Internal high-voltage generator

Applications

AS4C128M16D2-25BCNTR is suitable for use in a wide range of applications including:

• Mobile phones
• Digital cameras
• Personal media players
• Digital signage
• Industrial automation
• Game consoles
• Portable medical devices
• Automotive systems
• Tablet computers
• Network appliances
• Laptops
• Set-top boxes

Working Principle

The AS4C128M16D2-25BCNTR device is based on the All-Flash architecture and has a Fast SRAM cell structure. It facilitates integration of the main memory with additional logic which can provide powerful data handling. The device stores up to 128Mbits of data, which can be arranged as 16 equal widths of 16Gbit each. The device operates at 1.8V and supports up to 133MHz of operation with minimal power consumption. For proper operation of the device, the data width is fixed at 16 bits. In addition, the device has two separate query modes, burst read and burst write. The read cycle is initiated with an enable signal followed by the address of the data and ends when the WE signal is set to 0. The write cycles are initiated with enable signal AW and are completed when the WE signal is set to 0. The write cycle is triggered when the address passes the write precharge (W) control signal.The device also has an integrated self-refresh circuitry, which can help in keeping the contents of the memory without the need for externally monitored refresh cycles. Additionally, for data security the device employs 2 DWORDs of on-die ECC (Error Correcting Code) protection. This helps in data integrity and reliability in case of any data corruption. The AS4C128M16D2-25BCNTR device also provides efficient system-level programming using a Hold control signal. The Hold signal can be used to suspend arbitration accesses to the device, preventing any modifications or erasure during system programming. This feature can help in easing design complexity by allowing the system auto-refreshing the data.

Conclusion

AS4C128M16D2-25BCNTR is a powerful and reliable memory IC from Alliance Memory. It has a wide range of applications in portable, handheld, automotive and other similar applications which require a wide operating temperature range and low power operation. The device is based on All-Flash architecture and consists of a Fast SRAM cell structure. It facilitates integration of main memory with additional logic that can provide powerful data handling. The device has various features such as burst read and burst write, integrated self-refresh circuitry, two DWORDs of on-die ECC protection, and efficient system-level programming using a Hold control signal. All of these features make AS4C128M16D2-25BCNTR an ideal choice for applications that require high performance and low power.

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