AS4C256M16D3LA-12BANTR

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AS4C256M16D3LA-12BANTR is a type of memory, which is commonly used in a variety of applications, such as desktop computers, servers, mobile devices, and embedded systems. It is a high-performance, low-power memory device that is designed to deliver fast, reliable data storage and retrieval. The core component of AS4C256M16D3LA-12BANTR is the 16 Megabyte (16Mbit) static random access memory (SRAM) with the power of 3.3V and read/write speed up to 79 megabyte per second.

The AS4C256M16D3LA-12BANTR memory device is built to provide either 8 bit or 16 bit data access, which is based on the configuration of the memory device. It consists of 32 pre-defined interface pins that enable easy connection and integration into the target system. The interface pins can be used for both address and control signals. The device also includes a wide range of integrated features such as ECC, on-board self-test (OBST), and error-correcting codes (ECC).

The main usage of the AS4C256M16D3LA-12BANTR memory device is to store and retrieve data quickly and reliably. The device supports random access addressing, which allows the processor to access the same data multiple times or access different data each time. It also has the capability to enable data pre-fetching and caching, which improves the performance of the system by avoiding long latencies caused by memory access. Its memory bandwidth also allows it to transfer large quantities of data in a very short space of time.

The working principle of the AS4C256M16D3LA-12BANTR memory device is based on the SRAM architecture. SRAM is a type of memory device that stores its data on individual transistors. The basic concept of SRAM is to use the transistors to switch between two different states, either "on" or "off". The transistors are then connected together in a way that creates memory cells which can be read from and written to. This allows the device to store data in each individual cell, allowing for fast and reliable access.

The AS4C256M16D3LA-12BANTR memory device makes use of a special read/write cycle that is designed to improve the performance of the device. This cycle works by reading a memory cell, followed by a write cycle to store the data. This process helps to improve the speed and reliability of the memory device as well as reducing power consumption. The memory device also provides on-board self-testing, error-correcting codes, and ECC coding to further improve reliability and performance.

The AS4C256M16D3LA-12BANTR memory device is a versatile memory device that can be used in a variety of applications that require fast, reliable data storage and retrieval. It is a great choice for embedded devices, desktop computers, servers, and mobile devices. It is also capable of handling large amounts of data transfer very quickly, making it an ideal choice for applications that rely on this type of memory technology.

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