AS4C8M32S-6TIN

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The AS4C8M32S-6TIN is a 32 Megabit dynamic random access memory (DRAM) device that is used in consumer and industrial electrical applications. The AS4C8M32S-6TIN is designed using a three-dimensional stacked architecture that increases DRAM performance and storage density. This design reduces power consumption and provides a wider operating range with improved reliability.

The AS4C8M32S-6TIN chip has a speed of 1333MHz and a CAS latency of 5 at 1T frequency. It is manufactured on a 70 nm process technology and has a power consumption rating of 2.2W. It has a typical operating voltage of 1.5V and an operating temperature range of 0°C to 70°C. The AS4C8M32S-6TIN is compliant with JEDEC and contains 32 Megabytes of storage capacity.

The AS4C8M32S-6TIN device supports industry standard DDR3 Synchronous Dynamic Random Access Memory (SDRAM) memory interface. It has a single 16 bit channel data bus with an 8-bit DDR3 data bus. It also supports page mode access and burst reads and writes. The device also supports column address strobe (CAS) latency of 5 cycles at 1T frequency. It is also capable of asynchronous refresh cycles to ensure data retention.

The AS4C8M32S-6TIN is well-suited for high-performance computing applications such as video gaming, advanced graphics, networking and storage. It is also suitable for general-purpose embedded systems that require low-power, high-density memory storage. The device is capable of storing 32 Megabytes of data at peak performance and is compliant with JEDEC standards. It also features an on-chip Self-Refresh with a refresh time of 1 ms and is capable of refreshing all words in a page in a single command.

The AS4C8M32S-6TIN is designed using advanced manufacturing techniques and features a wide range of features that improve performance and power consumption. It is designed to be an advanced system memory solution that provides high bandwidth and is capable of handling high data throughputs. The device also supports Error Correction Code (ECC) and Self-Refresh functions to ensure reliable data access and storage. Additionally, the device offers extended lifespan and is rated for up to 1 million write cycles.

The AS4C8M32S-6TIN is a highly efficient and reliable memory device that is well suited for many applications. The device is designed with an advanced three-dimensional stacked architecture that improves performance and power efficiency. The device also supports a wide range of industry standard memory interface and is rated for up to 1 million write cycles. It is also compliant with JEDEC and is ideal for applications such as gaming, advanced graphics, networking and storage.

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