AS4C32M16D2B-25BCNTR

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AS4C32M16D2B-25BCNTR is an advanced high speed SRAM device, which consists of an array of 16,384 x 32 (1M words x 32 bits) memory cells organized as 131,072 words x 16 bits. It offers a wide range of application fields for its high performance and low cost.

AS4C32M16D2B-25BCNTR’s application fields range from industrial automation, aviation, military, and telecommunications to consumer electronics, high speed data storage, and automotive safety systems. Its versatility allows it to be used in a variety of applications, from sophisticated industrial systems to low cost consumer products.

AS4C32M16D2B-25BCNTR’s working principle is based on a simple concept: data is stored in a series of memory cells, and can be read or written to by passing an electric current through the memory cells.

The memory cells contain two parts – a capacitive element and a resistor. The capacitors store the data, while the resistors determine the amount of current that can pass through them. This is how data is read or written to the SRAM.

The capacitors are also used to determine the write threshold, which determines when the memory cells can be written to. The write threshold ensures that only valid data is written to the memory cells, and that stored data is not unintentionally modified by background noise.

AS4C32M16D2B-25BCNTR is designed to provide high-speed access, low power consumption, and fast response times. Its fast response times make it suitable for applications that require quick read/write access such as industrial automation, avionics, and military applications. Its low power consumption also makes it a great choice for consumer electronics, automotive safety systems, and data storage.

Its wide range of application fields and easy to use working principle make AS4C32M16D2B-25BCNTR the perfect choice for users who need a reliable, high speed SRAM. Its affordability and versatility make it the perfect choice for users who need a reliable, cost effective solution for their application.

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