Allicdata Part #: | 1450-1259-ND |
Manufacturer Part#: |
AS4C4M16SA-6TCN |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Alliance Memory, Inc. |
Short Description: | IC DRAM 64M PARALLEL 54TSOP |
More Detail: | SDRAM Memory IC 64Mb (4M x 16) Parallel 166MHz 5.4... |
DataSheet: | AS4C4M16SA-6TCN Datasheet/PDF |
Quantity: | 58 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM |
Memory Size: | 64Mb (4M x 16) |
Clock Frequency: | 166MHz |
Write Cycle Time - Word, Page: | 2ns |
Access Time: | 5.4ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 54-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 54-TSOP II |
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Memory technology is constantly evolving, and newer and more efficient technologies are being developed every day. One such technology is AS4C4M16SA-6TCN, a type of semiconductor device that is used to store and access data. This technology has been gaining popularity due to its wide range of applications and its reliable performance in memory-intensive tasks. This article will discuss the application field of AS4C4M16SA-6TCN and its working principle.
AS4C4M16SA-6TCN is a type of ferroelectric random access memory (FeRAM) — a kind of non-volatile memory that stores electrical charge inside a sample of ferroelectric material instead of digital bits, which allows for much higher capacity storage. As a result, this technology can be used for a range of applications, from consumer electronics to industrial control systems and more. The main advantage of this type of memory is its fast access time and low power consumption, making it a suitable choice for memory-intensive tasks in which power consumption is a major concern.
With regards to its working principle, AS4C4M16SA-6TCN uses an electric field to switch polarity in the ferroelectric material. When the electric field is applied, the polarization of the material changes direction and an electric dipole moment can be created. The dipole moment is then used to read and write data in the memory. Compared to traditional memory technologies, this type of process requires less energy and power, allowing for faster storage and retrieval of data.
Another key feature of AS4C4M16SA-6TCN is its durability and reliability. The ferroelectric material used in this technology is very resistant to aging, meaning that the memory is far less likely to suffer from data loss even after long periods of use. In addition, the technology is also resistant to environmental noise, which makes it suitable for a range of applications in industrial, military, and aviation settings.
Overall, AS4C4M16SA-6TCN is an efficient and reliable type of memory technology that has a wide range of applications. It has a fast access time, low power consumption, and is highly resistant to aging and environmental noise. As such, it is an ideal choice for a range of applications that would benefit from these qualities.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
AS4C1M16S-6TCN | Alliance Mem... | 1.24 $ | 65 | IC DRAM 16M PARALLEL 50TS... |
AS4C4M16SA-7B2CN | Alliance Mem... | 1.53 $ | 348 | IC DRAM 64M PARALLEL 60FB... |
AS4C2M32D1A-5BCN | Alliance Mem... | 2.0 $ | 88 | IC DRAM 64M PARALLEL 144L... |
AS4C32M8SA-7TCN | Alliance Mem... | 2.51 $ | 82 | IC DRAM 256M PARALLEL 54T... |
AS4C32M8SA-6TIN | Alliance Mem... | 2.74 $ | 75 | IC DRAM 256M PARALLEL 54T... |
AS4C16M32MSA-6BIN | Alliance Mem... | 4.2 $ | 92 | IC DRAM 512M PARALLEL 90F... |
AS4C256M16D3B-12BAN | Alliance Mem... | 9.67 $ | 39 | IC DRAM 4G PARALLEL 96FBG... |
AS4C256M16D3LB-12BAN | Alliance Mem... | 9.67 $ | 216 | IC DRAM 4G PARALLEL 96FBG... |
AS4C128M8D1-6TIN | Alliance Mem... | 31.07 $ | 10 | IC DRAM 1G PARALLEL 66TSO... |
AS4C16M16D1A-5TIN | Alliance Mem... | -- | 38 | IC DRAM 256M PARALLEL 66T... |
AS4C64M16D3A-12BCN | Alliance Mem... | -- | 39 | IC DRAM 1G PARALLEL 96FBG... |
AS4C128M8D3A-12BCN | Alliance Mem... | 3.33 $ | 85 | IC DRAM 1G PARALLEL 78FBG... |
AS4C64M16D3LA-12BCN | Alliance Mem... | 3.4 $ | 83 | IC DRAM 1G PARALLEL 96FBG... |
AS4C8M32S-7TCN | Alliance Mem... | 4.27 $ | 82 | IC DRAM 256M PARALLEL 86T... |
AS4C128M16D3A-12BCN | Alliance Mem... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96FBG... |
AS4C128M16D3LA-12BCN | Alliance Mem... | 4.8 $ | 50 | IC DRAM 2G PARALLEL 96FBG... |
AS4C512M8D3-12BAN | Alliance Mem... | 8.67 $ | 42 | IC DRAM 4G PARALLEL 78FBG... |
AS4C64M16D2-25BAN | Alliance Mem... | 4.84 $ | 195 | IC DRAM 1G PARALLEL 84FBG... |
AS4C64M16D3-12BAN | Alliance Mem... | 4.91 $ | 162 | IC DRAM 1G PARALLEL 96FBG... |
AS4C128M16D3LA-12BIN | Alliance Mem... | -- | 1000 | IC DRAM 2G PARALLEL 96FBG... |
AS4C128M16D3LA-12BAN | Alliance Mem... | 5.96 $ | 237 | IC DRAM 2G PARALLEL 96FBG... |
AS4C512M8D3L-12BCN | Alliance Mem... | 6.28 $ | 198 | IC DRAM 4G PARALLEL 78FBG... |
AS4C512M8D3LA-12BCN | Alliance Mem... | 7.57 $ | 220 | IC DRAM 4G PARALLEL 78FBG... |
AS4C512M8D3A-12BCN | Alliance Mem... | 7.57 $ | 190 | IC DRAM 4G PARALLEL 78FBG... |
AS4C512M8D3A-12BAN | Alliance Mem... | 9.42 $ | 216 | IC DRAM 4G PARALLEL 78FBG... |
AS4C256M16D3A-12BAN | Alliance Mem... | 9.67 $ | 253 | IC DRAM 4G PARALLEL 96FBG... |
AS4C32M16SB-7TCNTR | Alliance Mem... | 6.51 $ | 1000 | IC DRAM 512M PARALLEL 54T... |
AS4C128M8D2-25BIN | Alliance Mem... | 4.2 $ | 1358 | IC DRAM 1G PARALLEL 60FBG... |
AS4C1M16S-7TCN | Alliance Mem... | -- | 1380 | IC DRAM 16M PARALLEL 50TS... |
AS4C1M16S-6TIN | Alliance Mem... | 1.48 $ | 385 | IC DRAM 16M PARALLEL 50TS... |
AS4C4M16SA-6TCN | Alliance Mem... | -- | 58 | IC DRAM 64M PARALLEL 54TS... |
AS4C4M16SA-7BCN | Alliance Mem... | 1.68 $ | 331 | IC DRAM 64M PARALLEL 54TF... |
AS4C64M8D1-5TIN | Alliance Mem... | 3.03 $ | 60 | IC DRAM 512M PARALLEL 66T... |
AS4C8M16SA-6BIN | Alliance Mem... | 3.18 $ | 391 | IC DRAM 128M PARALLEL 54T... |
AS4C64M16D1A-6TIN | Alliance Mem... | 16.52 $ | 94 | IC DRAM 1G PARALLEL 66TSO... |
AS4C4M32SA-6TCN | Alliance Mem... | 2.66 $ | 33 | IC DRAM 128M PARALLEL 86T... |
AS4C2M32SA-6TIN | Alliance Mem... | 2.88 $ | 97 | IC DRAM 64M PARALLEL 86TS... |
AS4C64M8D2-25BAN | Alliance Mem... | 4.34 $ | 48 | IC DRAM 512M PARALLEL 60F... |
AS4C2M32S-6TIN | Alliance Mem... | 2.58 $ | 10097 | IC DRAM 64M PARALLEL 86TS... |
AS4C128M8D3LA-12BCN | Alliance Mem... | 3.47 $ | 242 | IC DRAM 1G PARALLEL 78FBG... |
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