AS4C4M16SA-6TCN Allicdata Electronics
Allicdata Part #:

1450-1259-ND

Manufacturer Part#:

AS4C4M16SA-6TCN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 64M PARALLEL 54TSOP
More Detail: SDRAM Memory IC 64Mb (4M x 16) Parallel 166MHz 5.4...
DataSheet: AS4C4M16SA-6TCN datasheetAS4C4M16SA-6TCN Datasheet/PDF
Quantity: 58
Stock 58Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (4M x 16)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 2ns
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory technology is constantly evolving, and newer and more efficient technologies are being developed every day. One such technology is AS4C4M16SA-6TCN, a type of semiconductor device that is used to store and access data. This technology has been gaining popularity due to its wide range of applications and its reliable performance in memory-intensive tasks. This article will discuss the application field of AS4C4M16SA-6TCN and its working principle.

AS4C4M16SA-6TCN is a type of ferroelectric random access memory (FeRAM) — a kind of non-volatile memory that stores electrical charge inside a sample of ferroelectric material instead of digital bits, which allows for much higher capacity storage. As a result, this technology can be used for a range of applications, from consumer electronics to industrial control systems and more. The main advantage of this type of memory is its fast access time and low power consumption, making it a suitable choice for memory-intensive tasks in which power consumption is a major concern.

With regards to its working principle, AS4C4M16SA-6TCN uses an electric field to switch polarity in the ferroelectric material. When the electric field is applied, the polarization of the material changes direction and an electric dipole moment can be created. The dipole moment is then used to read and write data in the memory. Compared to traditional memory technologies, this type of process requires less energy and power, allowing for faster storage and retrieval of data.

Another key feature of AS4C4M16SA-6TCN is its durability and reliability. The ferroelectric material used in this technology is very resistant to aging, meaning that the memory is far less likely to suffer from data loss even after long periods of use. In addition, the technology is also resistant to environmental noise, which makes it suitable for a range of applications in industrial, military, and aviation settings.

Overall, AS4C4M16SA-6TCN is an efficient and reliable type of memory technology that has a wide range of applications. It has a fast access time, low power consumption, and is highly resistant to aging and environmental noise. As such, it is an ideal choice for a range of applications that would benefit from these qualities.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "AS4C" Included word is 40
Part Number Manufacturer Price Quantity Description
AS4C1M16S-6TCN Alliance Mem... 1.24 $ 65 IC DRAM 16M PARALLEL 50TS...
AS4C4M16SA-7B2CN Alliance Mem... 1.53 $ 348 IC DRAM 64M PARALLEL 60FB...
AS4C2M32D1A-5BCN Alliance Mem... 2.0 $ 88 IC DRAM 64M PARALLEL 144L...
AS4C32M8SA-7TCN Alliance Mem... 2.51 $ 82 IC DRAM 256M PARALLEL 54T...
AS4C32M8SA-6TIN Alliance Mem... 2.74 $ 75 IC DRAM 256M PARALLEL 54T...
AS4C16M32MSA-6BIN Alliance Mem... 4.2 $ 92 IC DRAM 512M PARALLEL 90F...
AS4C256M16D3B-12BAN Alliance Mem... 9.67 $ 39 IC DRAM 4G PARALLEL 96FBG...
AS4C256M16D3LB-12BAN Alliance Mem... 9.67 $ 216 IC DRAM 4G PARALLEL 96FBG...
AS4C128M8D1-6TIN Alliance Mem... 31.07 $ 10 IC DRAM 1G PARALLEL 66TSO...
AS4C16M16D1A-5TIN Alliance Mem... -- 38 IC DRAM 256M PARALLEL 66T...
AS4C64M16D3A-12BCN Alliance Mem... -- 39 IC DRAM 1G PARALLEL 96FBG...
AS4C128M8D3A-12BCN Alliance Mem... 3.33 $ 85 IC DRAM 1G PARALLEL 78FBG...
AS4C64M16D3LA-12BCN Alliance Mem... 3.4 $ 83 IC DRAM 1G PARALLEL 96FBG...
AS4C8M32S-7TCN Alliance Mem... 4.27 $ 82 IC DRAM 256M PARALLEL 86T...
AS4C128M16D3A-12BCN Alliance Mem... 0.0 $ 1000 IC DRAM 2G PARALLEL 96FBG...
AS4C128M16D3LA-12BCN Alliance Mem... 4.8 $ 50 IC DRAM 2G PARALLEL 96FBG...
AS4C512M8D3-12BAN Alliance Mem... 8.67 $ 42 IC DRAM 4G PARALLEL 78FBG...
AS4C64M16D2-25BAN Alliance Mem... 4.84 $ 195 IC DRAM 1G PARALLEL 84FBG...
AS4C64M16D3-12BAN Alliance Mem... 4.91 $ 162 IC DRAM 1G PARALLEL 96FBG...
AS4C128M16D3LA-12BIN Alliance Mem... -- 1000 IC DRAM 2G PARALLEL 96FBG...
AS4C128M16D3LA-12BAN Alliance Mem... 5.96 $ 237 IC DRAM 2G PARALLEL 96FBG...
AS4C512M8D3L-12BCN Alliance Mem... 6.28 $ 198 IC DRAM 4G PARALLEL 78FBG...
AS4C512M8D3LA-12BCN Alliance Mem... 7.57 $ 220 IC DRAM 4G PARALLEL 78FBG...
AS4C512M8D3A-12BCN Alliance Mem... 7.57 $ 190 IC DRAM 4G PARALLEL 78FBG...
AS4C512M8D3A-12BAN Alliance Mem... 9.42 $ 216 IC DRAM 4G PARALLEL 78FBG...
AS4C256M16D3A-12BAN Alliance Mem... 9.67 $ 253 IC DRAM 4G PARALLEL 96FBG...
AS4C32M16SB-7TCNTR Alliance Mem... 6.51 $ 1000 IC DRAM 512M PARALLEL 54T...
AS4C128M8D2-25BIN Alliance Mem... 4.2 $ 1358 IC DRAM 1G PARALLEL 60FBG...
AS4C1M16S-7TCN Alliance Mem... -- 1380 IC DRAM 16M PARALLEL 50TS...
AS4C1M16S-6TIN Alliance Mem... 1.48 $ 385 IC DRAM 16M PARALLEL 50TS...
AS4C4M16SA-6TCN Alliance Mem... -- 58 IC DRAM 64M PARALLEL 54TS...
AS4C4M16SA-7BCN Alliance Mem... 1.68 $ 331 IC DRAM 64M PARALLEL 54TF...
AS4C64M8D1-5TIN Alliance Mem... 3.03 $ 60 IC DRAM 512M PARALLEL 66T...
AS4C8M16SA-6BIN Alliance Mem... 3.18 $ 391 IC DRAM 128M PARALLEL 54T...
AS4C64M16D1A-6TIN Alliance Mem... 16.52 $ 94 IC DRAM 1G PARALLEL 66TSO...
AS4C4M32SA-6TCN Alliance Mem... 2.66 $ 33 IC DRAM 128M PARALLEL 86T...
AS4C2M32SA-6TIN Alliance Mem... 2.88 $ 97 IC DRAM 64M PARALLEL 86TS...
AS4C64M8D2-25BAN Alliance Mem... 4.34 $ 48 IC DRAM 512M PARALLEL 60F...
AS4C2M32S-6TIN Alliance Mem... 2.58 $ 10097 IC DRAM 64M PARALLEL 86TS...
AS4C128M8D3LA-12BCN Alliance Mem... 3.47 $ 242 IC DRAM 1G PARALLEL 78FBG...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics