AS4C4M16SA-6TCN Allicdata Electronics
Allicdata Part #:

1450-1259-ND

Manufacturer Part#:

AS4C4M16SA-6TCN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 64M PARALLEL 54TSOP
More Detail: SDRAM Memory IC 64Mb (4M x 16) Parallel 166MHz 5.4...
DataSheet: AS4C4M16SA-6TCN datasheetAS4C4M16SA-6TCN Datasheet/PDF
Quantity: 58
Stock 58Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (4M x 16)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 2ns
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II
Description

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Memory technology is constantly evolving, and newer and more efficient technologies are being developed every day. One such technology is AS4C4M16SA-6TCN, a type of semiconductor device that is used to store and access data. This technology has been gaining popularity due to its wide range of applications and its reliable performance in memory-intensive tasks. This article will discuss the application field of AS4C4M16SA-6TCN and its working principle.

AS4C4M16SA-6TCN is a type of ferroelectric random access memory (FeRAM) — a kind of non-volatile memory that stores electrical charge inside a sample of ferroelectric material instead of digital bits, which allows for much higher capacity storage. As a result, this technology can be used for a range of applications, from consumer electronics to industrial control systems and more. The main advantage of this type of memory is its fast access time and low power consumption, making it a suitable choice for memory-intensive tasks in which power consumption is a major concern.

With regards to its working principle, AS4C4M16SA-6TCN uses an electric field to switch polarity in the ferroelectric material. When the electric field is applied, the polarization of the material changes direction and an electric dipole moment can be created. The dipole moment is then used to read and write data in the memory. Compared to traditional memory technologies, this type of process requires less energy and power, allowing for faster storage and retrieval of data.

Another key feature of AS4C4M16SA-6TCN is its durability and reliability. The ferroelectric material used in this technology is very resistant to aging, meaning that the memory is far less likely to suffer from data loss even after long periods of use. In addition, the technology is also resistant to environmental noise, which makes it suitable for a range of applications in industrial, military, and aviation settings.

Overall, AS4C4M16SA-6TCN is an efficient and reliable type of memory technology that has a wide range of applications. It has a fast access time, low power consumption, and is highly resistant to aging and environmental noise. As such, it is an ideal choice for a range of applications that would benefit from these qualities.

The specific data is subject to PDF, and the above content is for reference

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