AS4C256M16D3LA-12BINTR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - DDR3L
Memory Size:	4Gb (256M x 16)
Clock Frequency:	800MHz
Write Cycle Time - Word, Page:	15ns
Access Time:	20ns
Memory Interface:	Parallel
Voltage - Supply:	1.283 V ~ 1.45 V
Operating Temperature:	-40°C ~ 95°C (TC)
Mounting Type:	Surface Mount
Package / Case:	96-VFBGA
Supplier Device Package:	96-FBGA (13x9)

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Introduction

AS4C256M16D3LA-12BINTR is a type of dynamic random access memory (DRAM), which provides fast random access to stored data without reliance on a memory bank. This type of memory is widely used in a luxury of devices, including desktop computers and laptops, game consoles, server applications, digital cameras and more.

Design Overview

AS4C256M16D3LA-12BINTR is a 4Gb DDR3 module with a x32-bit trace width. It is configured with 4Gb x 4 chip-selects and 8 banks. This configuration gives the module a total capacity of 8Gb (4Gb x 2) and a theoretical speed of 1066MHz with CL=7.The module\'s unique design is its capacity to deliver a very low latency of 6.4ns and a low power consumption of only 1.2 Volts at 1066MHz. The power supply is provided by an integrated 2-phase regulator and supports both static and dynamic operating modes. Furthermore, the module features an advanced Z-height of 0.37” and an H-height of 0.29”.

Application Field

AS4C256M16D3LA-12BINTR is a popular choice among device manufacturers. The module is designed to be compatible with a variety of different systems, ranging from gaming consoles to server applications. Its low latency and low power consumption makes it a good choice for devices where speed and energy efficiency are paramount.This type of memory is also widely used in digital cameras and multimedia applications where speed and high capacity are desirable. The module is especially beneficial for application designs that require the capacity of two DRAMs in an integrated component.

Working Principle

AS4C256M16D3LA-12BINTR is a type of dynamic random access memory (DRAM). This type of memory has a fast random access time and relies on a memory bank for storage. DRAMs are composed of a set of memory cells that are constantly refreshed to maintain the stored data. Each memory cell is composed of a transistor and a capacitor and stores a single bit of data.When the data is read from the memory, the capacitors discharge and must be constantly refreshed in order to maintain the data. This requires a large amount of energy and reduces the speed of the memory access. However, modern implementations of DRAMs have reduced the refresh rate, thereby improving the performance of the memory.

Conclusion

AS4C256M16D3LA-12BINTR is a type of dynamic random access memory (DRAM). This type of memory is commonly used in a variety of applications and devices, due to its low latency and low power consumption. The module is also beneficial for applications that require the capacity of two DRAMs. The memory works by reading and writing data to a set of memory cells composed of a transistor and a capacitor, which are constantly refreshed in order to maintain the stored data.

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