Allicdata Part #: | AS4C1M16S-6TCNTR-ND |
Manufacturer Part#: |
AS4C1M16S-6TCNTR |
Price: | $ 0.98 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Alliance Memory, Inc. |
Short Description: | IC DRAM 16M PARALLEL 50TSOP II |
More Detail: | SDRAM Memory IC 16Mb (1M x 16) Parallel 166MHz 5.4... |
DataSheet: | AS4C1M16S-6TCNTR Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.89065 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM |
Memory Size: | 16Mb (1M x 16) |
Clock Frequency: | 166MHz |
Write Cycle Time - Word, Page: | 2ns |
Access Time: | 5.4ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 50-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 50-TSOP II |
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The term AS4C1M16S-6TCNTR Memory refers to a type of memory that uses a single integrated circuit to store information. It is a form of computer data storage known as semiconductor memory, as it stores data using transistors.
The AS4C1M16S-6TCNTR Memory consists of a 16-megabit random access memory (RAM) connected to a 6-to-8T bus. This bus is used to provide access to the memory chip and facilitates communication between the processor and the memory.
The AS4C1M16S-6TCNTR Memory is suitable for embedded systems, such as printers, copiers, and any applications that require high-density memory chips. It is also suitable for mobile devices, such as mobile phones and tablets, as it allows for a low-power consumption.
The working principle of the AS4C1M16S-6TCNTR Memory is based on CMOS technology. CMOS stands for complementary metal-oxide-semiconductor and is one of the most widely used technologies for memory chips. CMOS technology uses two complementary, MOS transistors to store one bit of data, which is why it is known as a “destructive” memory chip.
The two transistors take up a very small surface area, making it highly efficient. The two transistors are connected to an address bus and a data bus. The address bus is used to select a location in the memory, while the data bus is used to read or write data to that location.
Once the address is selected, the data is written to the cell by first applying a positive voltage and then a negative voltage. This creates a magnetic field that causes the memory cell to change state, thus writing the data. The data will then remain in the memory until the power is removed or the address is changed.
AS4C1M16S-6TCNTR Memory is a highly efficient and low-cost form of computer data storage. It is used in applications such as printers, copiers, mobile devices, and any embedded system that requires memory chips. Its working principle is based on CMOS technology, which provides both low-power consumption and a high density of memory.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
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AS4C64M16D3LA-12BCN | Alliance Mem... | 3.4 $ | 83 | IC DRAM 1G PARALLEL 96FBG... |
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AS4C64M16D3-12BAN | Alliance Mem... | 4.91 $ | 162 | IC DRAM 1G PARALLEL 96FBG... |
AS4C128M16D3LA-12BIN | Alliance Mem... | -- | 1000 | IC DRAM 2G PARALLEL 96FBG... |
AS4C128M16D3LA-12BAN | Alliance Mem... | 5.96 $ | 237 | IC DRAM 2G PARALLEL 96FBG... |
AS4C512M8D3L-12BCN | Alliance Mem... | 6.28 $ | 198 | IC DRAM 4G PARALLEL 78FBG... |
AS4C512M8D3LA-12BCN | Alliance Mem... | 7.57 $ | 220 | IC DRAM 4G PARALLEL 78FBG... |
AS4C512M8D3A-12BCN | Alliance Mem... | 7.57 $ | 190 | IC DRAM 4G PARALLEL 78FBG... |
AS4C512M8D3A-12BAN | Alliance Mem... | 9.42 $ | 216 | IC DRAM 4G PARALLEL 78FBG... |
AS4C256M16D3A-12BAN | Alliance Mem... | 9.67 $ | 253 | IC DRAM 4G PARALLEL 96FBG... |
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AS4C64M8D1-5TIN | Alliance Mem... | 3.03 $ | 60 | IC DRAM 512M PARALLEL 66T... |
AS4C8M16SA-6BIN | Alliance Mem... | 3.18 $ | 391 | IC DRAM 128M PARALLEL 54T... |
AS4C64M16D1A-6TIN | Alliance Mem... | 16.52 $ | 94 | IC DRAM 1G PARALLEL 66TSO... |
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