
Allicdata Part #: | AS4C32M16SB-6TIN-ND |
Manufacturer Part#: |
AS4C32M16SB-6TIN |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Alliance Memory, Inc. |
Short Description: | IC DRAM 512M PARALLEL 54TSOP |
More Detail: | SDRAM Memory IC 512Mb (32M x 16) Parallel 166MHz 5... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM |
Memory Size: | 512Mb (32M x 16) |
Clock Frequency: | 166MHz |
Write Cycle Time - Word, Page: | 12ns |
Access Time: | 5ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 54-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 54-TSOP II |
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AS4C32M16SB-6TIN is a DDR4 SDRAM for low-power mobile applications. It is a 32M x 16bit single-die DRAM that uses the latest technology from Micron, featuring low power and high efficiency. The AS4C32M16SB-6TIN is specially designed to meet the challenging requirements of next-generation mobile applications such as smartphones, tablets and notebooks. It delivers high-speed, low-power operation with low latency.
Memory: AS4C32M16SB-6TIN application field and working principle
The AS4C32M16SB-6TIN is ideally suited for a wide range of mobile applications. It supports DDR4 data rates from 800 to 3200 MT/s and can be used in applications such as gaming, augmented reality (AR), virtual reality (VR), and artificial intelligence (AI). It is also suitable for applications that require high performance such as applications for consumer, automotive and medical devices.
It features an integrated voltage regulator that provides an adjustable voltage range from 1.2V to 1.5V. It also includes an integrated power regulator that provides an adjustable power range from 0.1V to 1.8V. This allows the AS4C32M16SB-6TIN to operate at the optimal power level for different mobile applications.
The AS4C32M16SB-6TIN is designed using TSMC\'s advanced 12 nm FinFET process and incorporates an advanced signal-processing architecture that provides an efficient design. It uses an array of I/O ports to implement a variety of applications, including high-speed signal transmission, signal processing, and error correction.
The AS4C32M16SB-6TIN can also provide a range of features, including on-die power-down and power-saving features, integrated error correction, and advanced clock synchronization. This allows it to provide higher data rates, better latency and reliability, and power savings in comparison to previous generations of DRAMs.
The AS4C32M16SB-6TIN is also optimized to improve signal integrity, reduce power consumption, and ensure maximum speed and reliability. This is achieved by using advanced signal processing technologies and optimized low-noise power management features, such as low-power cycle control, deep power-down mode and refresh management.
The AS4C32M16SB-6TIN is an ideal memory solution for a variety of mobile applications. It provides the speed, low-power operation and low-latency performance required by modern mobile applications. It is also capable of supporting various high-performance applications, such as gaming, AR, VR and AI.
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AS4C32M16SB-6TIN | Alliance Mem... | -- | 1000 | IC DRAM 512M PARALLEL 54T... |
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AS4C16M16MD1-6BCN | Alliance Mem... | 2.0 $ | 1011 | IC DRAM 256M PARALLEL 60F... |
AS4C64M8D2-25BCN | Alliance Mem... | -- | 331 | IC DRAM 512M PARALLEL 60F... |
AS4C32M16MSA-6BIN | Alliance Mem... | 4.2 $ | 301 | IC DRAM 512M PARALLEL 54F... |
AS4C128M16D3LA-12BAN | Alliance Mem... | 5.96 $ | 237 | IC DRAM 2G PARALLEL 96FBG... |
AS4C1M16S-6TCNTR | Alliance Mem... | 0.98 $ | 1000 | IC DRAM 16M PARALLEL 50TS... |
AS4C256M16D3-12BINTR | Alliance Mem... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
AS4C16M16S-7TCN | Alliance Mem... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 54T... |
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AS4C128M8D2A-25BCN | Alliance Mem... | 2.83 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
AS4C256M16D3LA-12BANTR | Alliance Mem... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
AS4C512M8D3A-12BINTR | Alliance Mem... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
AS4C64M8D3L-12BIN | Alliance Mem... | 2.88 $ | 242 | IC DRAM 512M PARALLEL 78F... |
AS4C32M16D2B-25BCNTR | Alliance Mem... | 1.9 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
AS4C32M16D1-5BCNTR | Alliance Mem... | 2.17 $ | 1000 | IC DRAM 512M PARALLEL 60B... |
AS4C8M16SA-6BAN | Alliance Mem... | 3.47 $ | 487 | IC DRAM 128M PARALLEL 54T... |
AS4C32M16D2A-25BINTR | Alliance Mem... | 2.06 $ | 1000 | IC DRAM 512M PARALLEL 84T... |
AS4C16M16SA-6TANTR | Alliance Mem... | 2.08 $ | 1000 | IC DRAM 256M PARALLEL 54T... |
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AS4C512M8D3A-12BCNTR | Alliance Mem... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
AS4C512M8D3LB-12BANTR | Alliance Mem... | 6.51 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
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AS4C64M16D3LB-12BIN | Alliance Mem... | 3.06 $ | 1000 | IC DRAM 1G PARALLEL 96FBG... |
AS4C32M16D1A-5TAN | Alliance Mem... | 2.81 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
AS4C32M16D2-25BCNTR | Alliance Mem... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84T... |
AS4C8M32S-7BCNTR | Alliance Mem... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90T... |
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AS4C128M16D3-12BANTR | Alliance Mem... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96FBG... |
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