AS4C32M16SB-6TIN Allicdata Electronics
Allicdata Part #:

AS4C32M16SB-6TIN-ND

Manufacturer Part#:

AS4C32M16SB-6TIN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 512M PARALLEL 54TSOP
More Detail: SDRAM Memory IC 512Mb (32M x 16) Parallel 166MHz 5...
DataSheet: AS4C32M16SB-6TIN datasheetAS4C32M16SB-6TIN Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (32M x 16)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AS4C32M16SB-6TIN is a DDR4 SDRAM for low-power mobile applications. It is a 32M x 16bit single-die DRAM that uses the latest technology from Micron, featuring low power and high efficiency. The AS4C32M16SB-6TIN is specially designed to meet the challenging requirements of next-generation mobile applications such as smartphones, tablets and notebooks. It delivers high-speed, low-power operation with low latency.

Memory: AS4C32M16SB-6TIN application field and working principle

The AS4C32M16SB-6TIN is ideally suited for a wide range of mobile applications. It supports DDR4 data rates from 800 to 3200 MT/s and can be used in applications such as gaming, augmented reality (AR), virtual reality (VR), and artificial intelligence (AI). It is also suitable for applications that require high performance such as applications for consumer, automotive and medical devices.

It features an integrated voltage regulator that provides an adjustable voltage range from 1.2V to 1.5V. It also includes an integrated power regulator that provides an adjustable power range from 0.1V to 1.8V. This allows the AS4C32M16SB-6TIN to operate at the optimal power level for different mobile applications.

The AS4C32M16SB-6TIN is designed using TSMC\'s advanced 12 nm FinFET process and incorporates an advanced signal-processing architecture that provides an efficient design. It uses an array of I/O ports to implement a variety of applications, including high-speed signal transmission, signal processing, and error correction.

The AS4C32M16SB-6TIN can also provide a range of features, including on-die power-down and power-saving features, integrated error correction, and advanced clock synchronization. This allows it to provide higher data rates, better latency and reliability, and power savings in comparison to previous generations of DRAMs.

The AS4C32M16SB-6TIN is also optimized to improve signal integrity, reduce power consumption, and ensure maximum speed and reliability. This is achieved by using advanced signal processing technologies and optimized low-noise power management features, such as low-power cycle control, deep power-down mode and refresh management.

The AS4C32M16SB-6TIN is an ideal memory solution for a variety of mobile applications. It provides the speed, low-power operation and low-latency performance required by modern mobile applications. It is also capable of supporting various high-performance applications, such as gaming, AR, VR and AI.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "AS4C" Included word is 40
Part Number Manufacturer Price Quantity Description
AS4C128M16D3-12BAN Alliance Mem... 0.0 $ 1000 IC DRAM 2G PARALLEL 96FBG...
AS4C256M16D3LA-12BIN Alliance Mem... 0.0 $ 1000 IC DRAM 4G PARALLEL 96FBG...
AS4C256M16D3LA-12BINTR Alliance Mem... 0.0 $ 1000 IC DRAM 4G PARALLEL 96FBG...
AS4C64M16MD1-5BINTR Alliance Mem... 0.0 $ 1000 IC DRAM 1G PARALLEL 60FBG...
AS4C32M16SA-7TIN Alliance Mem... 11.94 $ 447 IC DRAM 512M PARALLEL 54T...
AS4C128M16D3LB-12BIN Alliance Mem... -- 765 IC DRAM 2G PARALLEL 96FBG...
AS4C32M16SB-6TIN Alliance Mem... -- 1000 IC DRAM 512M PARALLEL 54T...
AS4C64M16D2B-25BCNTR Alliance Mem... 2.11 $ 1000 IC DRAM 1G PARALLEL 84FBG...
AS4C8M32S-6TIN Alliance Mem... 3.86 $ 1000 IC DRAM 256M PARALLEL 86T...
AS4C512M8D3LA-12BCNTR Alliance Mem... 0.0 $ 1000 IC DRAM 4G PARALLEL 78FBG...
AS4C16M16MD1-6BCN Alliance Mem... 2.0 $ 1011 IC DRAM 256M PARALLEL 60F...
AS4C64M8D2-25BCN Alliance Mem... -- 331 IC DRAM 512M PARALLEL 60F...
AS4C32M16MSA-6BIN Alliance Mem... 4.2 $ 301 IC DRAM 512M PARALLEL 54F...
AS4C128M16D3LA-12BAN Alliance Mem... 5.96 $ 237 IC DRAM 2G PARALLEL 96FBG...
AS4C1M16S-6TCNTR Alliance Mem... 0.98 $ 1000 IC DRAM 16M PARALLEL 50TS...
AS4C256M16D3-12BINTR Alliance Mem... 0.0 $ 1000 IC DRAM 4G PARALLEL 96FBG...
AS4C16M16S-7TCN Alliance Mem... 0.0 $ 1000 IC DRAM 256M PARALLEL 54T...
AS4C8M16SA-6TANTR Alliance Mem... 1.81 $ 1000 IC DRAM 128M PARALLEL 54T...
AS4C128M8D2A-25BCN Alliance Mem... 2.83 $ 1000 IC DRAM 1G PARALLEL 60FBG...
AS4C256M16D3LA-12BANTR Alliance Mem... 0.0 $ 1000 IC DRAM 4G PARALLEL 96FBG...
AS4C512M8D3A-12BINTR Alliance Mem... 0.0 $ 1000 IC DRAM 4G PARALLEL 78FBG...
AS4C64M8D3L-12BIN Alliance Mem... 2.88 $ 242 IC DRAM 512M PARALLEL 78F...
AS4C32M16D2B-25BCNTR Alliance Mem... 1.9 $ 1000 IC DRAM 512M PARALLEL 84F...
AS4C32M16D1-5BCNTR Alliance Mem... 2.17 $ 1000 IC DRAM 512M PARALLEL 60B...
AS4C8M16SA-6BAN Alliance Mem... 3.47 $ 487 IC DRAM 128M PARALLEL 54T...
AS4C32M16D2A-25BINTR Alliance Mem... 2.06 $ 1000 IC DRAM 512M PARALLEL 84T...
AS4C16M16SA-6TANTR Alliance Mem... 2.08 $ 1000 IC DRAM 256M PARALLEL 54T...
AS4C4M16D1-5TCN Alliance Mem... -- 1000 IC DRAM 64M PARALLEL 66TS...
AS4C512M8D3A-12BCNTR Alliance Mem... 0.0 $ 1000 IC DRAM 4G PARALLEL 78FBG...
AS4C512M8D3LB-12BANTR Alliance Mem... 6.51 $ 1000 IC DRAM 4G PARALLEL 78FBG...
AS4C16M32MSA-6BINTR Alliance Mem... 3.05 $ 1000 IC DRAM 512M PARALLEL 90F...
AS4C64M16D3LB-12BIN Alliance Mem... 3.06 $ 1000 IC DRAM 1G PARALLEL 96FBG...
AS4C32M16D1A-5TAN Alliance Mem... 2.81 $ 1000 IC DRAM 512M PARALLEL 66T...
AS4C32M16D2-25BCNTR Alliance Mem... 0.0 $ 1000 IC DRAM 512M PARALLEL 84T...
AS4C8M32S-7BCNTR Alliance Mem... 0.0 $ 1000 IC DRAM 256M PARALLEL 90T...
AS4C64M16D3-12BIN Alliance Mem... -- 1000 IC DRAM 1G PARALLEL 96FBG...
AS4C128M16D3-12BANTR Alliance Mem... 0.0 $ 1000 IC DRAM 2G PARALLEL 96FBG...
AS4C128M8D3LA-12BAN Alliance Mem... 0.0 $ 1000 IC DRAM 1G PARALLEL 78FBG...
AS4C4M16SA-6TCN Alliance Mem... -- 58 IC DRAM 64M PARALLEL 54TS...
AS4C32M8SA-7TCN Alliance Mem... 2.51 $ 82 IC DRAM 256M PARALLEL 54T...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics