AS4C128M16D3A-12BCNTR

The AS4C128M16D3A-12BCNTR memory is a modern product of the DRAM technology that utilizes the DDR3 SDRAM structure. It is a 128Mbit device that is designed to improve the speed, capacity, and power efficiency of memory devices in today’s digital devices. The device adopts a 16Mx8 organization and supports a speed of up to 12 ns. This device is commonly used in various applications, including servers, routers, switches, and embedded systems.

The AS4C128M16D3A-12BCNTR memory is available in two forms – SCC and SSP. The SCC, or simple chip-to-chip format, uses a PCB socket to connect two SoC packages. TheSoC package is the acronym for system-on-chip, which incorporates the memory, the memory controller and other needed components in a single package. The SSP, or simple socket-to-socket format, uses a PCB socket to connect multiple SoC packages.

In addition to its superior speed and capacity, the AS4C128M16D3A-12BCNTR memory has excellent power efficiency, as well. This device is capable of operating between 1.35 and 1.5V, thereby saving up to 40% in power consumption compared to traditional memories. It is also designed to withstand temperature changes and to operate at temperature ranging from 0°C to 90°C.

The working principle of the AS4C128M16D3A-12BCNTR memory relies on the creation and virtualization of DRAM cells. DRAM stands for “dynamic random access memory”, which is composed of millions of tiny capacitors that hold an electrical charge when they are in a specific state. When a row of cells is addressing, the addressed row stays open and the memory controller can access the contents of that row.

The AS4C128M16D3A-12BCNTR memory is especially advantageous for embedded systems as it has a fast access time of 12 ns and supports refresh commands. This helps keep the data safe from corruption due to power outages, unexpected reboots, and even changes in temperature. This is why this technology is suitable for embedded systems, which require reliable and long-term data storage.

In summary, the AS4C128M16D3A-12BCNTR memory is an example of how technology has advanced and it is now possible to achieve higher speeds and lower power consumption levels, making it an ideal choice for embedded systems, as well as other digital devices. The device adopts a 16Mx8 organization and supports a speed of up to 12 ns. It also has excellent power efficiency, as it is capable of operating between 1.35 and 1.5V, thereby saving up to 40% in power consumption compared to traditional memories. The working principle of this memory relies on the creation and virtualization of DRAM cells, thus creating a reliable and long-term data storage.