AS4C128M8D3-12BAN Allicdata Electronics
Allicdata Part #:

1450-1088-ND

Manufacturer Part#:

AS4C128M8D3-12BAN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 1G PARALLEL 78FBGA
More Detail: SDRAM - DDR3 Memory IC 1Gb (128M x 8) Parallel 800...
DataSheet: AS4C128M8D3-12BAN datasheetAS4C128M8D3-12BAN Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q100
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gb (128M x 8)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x10.5)
Description

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AS4C128M8D3-12BAN is a high-performance, high-speed and low-power (low power consumption) static random access memory (SRAM) designed for use in various applications. It features an integrated on-chip memory controller, high density for small packages, fast access time, low power consumption, and a wide operating temperature range from -40 to 85 degrees Celsius. The AS4C128M8D3-12BAN is part of the Artisan family of SRAMs from Alliance Memory.

In regards to its application field, the AS4C128M8D3-12BAN is suitable for consumer electronics, automotive and industrial applications. Because of its high-performance, wide operating temperature range and low power consumption, it is perfect for products that need reliable and robust performance in high-temperature or extreme operating conditions. The on-chip memory controller allows for easy and reliable memory access, controlling functions such as burst and page mode capability, thereby allowing designers to make use of full memory bandwidth while optimizing their design. It is also well suited for consumer electronics and automotive applications, such as networked transmitting and receiving devices and embedded systems.

In regards to its working principle, the AS4C128M8D3-12BAN operates on a three transistors cell SRAM architecture, which provides a full CMOS logic interface. The circuit design features both synchronous and asynchronous access for increased speed, low latency, and lower power consumption. The SRAM is divided into two separate banks; one for read and one for write operations. The two banks are interconnected via a switching matrix which is controlled by the on-chip memory controller. This allows for fast memory access and data transfer with low power consumption.

The SRAM also has a self-refresh mode which automatically refreshes memory cells for high endurance. This feature not only reduces power consumption, but also prevents data loss due to unpredictable power drops or supply fluctuations. The AS4C128M8D3-12BAN also supports multiple refresh rates, allowing designers to choose the refresh rate that best suits their application. Finally, the on-chip memory controller also allows for error correction, allowing programmers to write data with confidence knowing that errors are corrected before they are written to the SRAM.

In conclusion, the AS4C128M8D3-12BAN SRAM is designed for use in various applications where high performance and low power requirements are necessary. It features an integrated on-chip memory controller, high density for small packages, fast access time, low power consumption, and a wide operating temperature range from -40 to 85 degrees Celsius. With its versatility and robust performance, the AS4C128M8D3-12BAN is ideal for industrial and automotive applications where reliability and robustness are paramount.

The specific data is subject to PDF, and the above content is for reference

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