AS4C128M8D3-12BIN Allicdata Electronics
Allicdata Part #:

1450-1090-ND

Manufacturer Part#:

AS4C128M8D3-12BIN

Price: $ 3.46
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 1G PARALLEL 78FBGA
More Detail: SDRAM - DDR3 Memory IC 1Gb (128M x 8) Parallel 800...
DataSheet: AS4C128M8D3-12BIN datasheetAS4C128M8D3-12BIN Datasheet/PDF
Quantity: 11
1 +: $ 3.14370
10 +: $ 2.86776
25 +: $ 2.81308
50 +: $ 2.79367
100 +: $ 2.50614
250 +: $ 2.49652
Stock 11Can Ship Immediately
$ 3.46
Specifications
Series: --
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gb (128M x 8)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x10.5)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AS4C128M8D3-12BIN is a low-cost, easy-to-use, 128Mbits (16M word x 8 bit) SLC NAND FLASH memory from Alliance Memory. This device is based on the JEDEC standard and is available in the 8-pin SOIC package. The device is pin-for-pin compatible with AM9128, AM9128G, AM9128BM, AM9128BG, and AM9128BEL. This memory provides fast access time and low power consumption for embedded applications.

Application Field

AS4C128M8D3-12BIN memory is suitable for wide range of low-cost, embedded applications such as security systems, consumer electronics, industrial applications, GPS, smart cards, and other multimedia applications. The fast access time and low power consumption of this device makes it ideal for applications where low power consumption is essential. Such as portable devices and battery-powered equipments. Additionally, the device also provides data security, which is essential for industrial applications and other critical fields.

Working Principle

AS4C128M8D3-12BIN employs a static random access memory (SRAM) technology. It is composed of a memory array and a sense amplifier to amplify the voltages stored in the memory cells. The memory array is arranged into two rows of columns and each row has nine columns. The sense amplifier detects small changes in voltages stored in the memory cells and amplifies them to a larger voltage that can be read by the controller. To access the data in the memory cells, a sequence of commands has to be sent by the controller. After being read, the data cells are refreshed in order to maintain their integrity.

AS4C128M8D3-12BIN also features a built-in error correction code (ECC) that detects and corrects single and double bit errors. This feature helps to improve the reliability and accuracy of data stored in the memory array. Furthermore, the device also features an auto sleep mode that reduces power consumption when the device is not in use. Finally, the device features a programmable read delay that can be used to set the access time of the device to meet the requirements of the application.

The specific data is subject to PDF, and the above content is for reference

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