AS4C128M8D3B-12BCNTR

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AS4C128M8D3B-12BCNTR is a family of high-density, low-power, non-volatile static random access memories (SRAMs). High-density SRAMs allow system designers to reduce their memory footprint while providing higher performance storage solutions. In addition, non-volatile SRAMs provide designers with a flexible storage solution that requires no manual initialization and retains data even during power cycles to ensure data integrity in applications across a wide range of industries.

In the field of memory, AS4C128M8D3B-12BCNTR is widely used in applications such as automotive, industrial, and consumer applications. Automotive applications typically operate under high temperatures and environmental conditions. As a result, memory components must be resistant to extreme temperatures and environmental conditions. AS4C128M8D3B-12BCNTR is ideal for automotive applications, as it has an operating temperature range of -40℃ to +125℃. Moreover, it has a thermal resistance of <25℃/W and an ESD rating of 8kV.

Industrial applications require robust components that can perform in harsh environments, such as extreme temperatures, vibration, and harsh electrical noises. AS4C128M8D3B-12BCNTR is designed to withstand these harsh environments and offers an excellent fit for industrial applications. The device has an operating temperature range of -40℃ to +125℃ and a thermal resistance of <25℃/W. It is also qualified for industrial grade reliability, with an ESD rating of 8kV and a minimum data retention time of 100 years.

AS4C128M8D3B-12BCNTR is also well-suited for consumer applications, as it provides a low power consumption and robust reliability for use in products such as smartphones, tablets, cameras, gaming consoles, and other electronic devices. It has a low active current consumption of 18 mA, a standby current consumption of 0.6 μA, and a data retention voltage of 1.5V. Additionally, AS4C128M8D3B-12BCNTR offers an ESD rating of 8kV and a minimum data retention time of 100 years, making it ideal for consumer applications.

In addition to its wide range of application fields, AS4C128M8D3B-12BCNTR also offers excellent performance. The device has an access speed of 12ns, a cycle time of 25ns, and a select cycle time of 2.5ns, allowing for fast read/write access. It also offers low power consumption and robust reliability with an active current consumption of 18mA, a standby current consumption of 0.6μA, and a data retention voltage of 1.5V.

AS4C128M8D3B-12BCNTR is a non-volatile static random access memory that offers an excellent combination of high-density storage, robust reliability, and low power consumption. It has an operating temperature range of -40℃ to +125℃, a thermal resistance of <25℃/W, and an ESD rating of 8kV. In addition, it provides fast access times with an access speed of 12ns, a cycle time of 25ns, and a select cycle time of 2.5ns. AS4C128M8D3B-12BCNTR is ideal for a wide range of applications, including automotive, consumer, and industrial applications, and offers excellent performance and reliability for use in these applications.

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