AS4C128M8D3B-12BIN

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Memory is an essential part of any electronic system. Memory allows for the storage and retrieval of data, which is necessary for innovative and efficient products and services. The AS4C128M8D3B-12BIN is a memory solution from ATMEL that offers high performance and reliability. This guide will explain the application field and working principle of the AS4C128M8D3B-12BIN.

Application Field

The AS4C128M8D3B-12BIN is a 128Mbit (16MB) asynchronous CMOS low-voltage Static Random Access Memory (SRAM) device. It is designed to optimize power and performance in applications such as automotive infotainment systems, industrial automation, field programmable gate arrays (FPGA) and embedded systems. The device offers access speeds of up to 55ns and operates at a wide range of voltages between 1.71V and 1.95V. It has an integrated error detection and correction (EDC) engine to ensure data integrity.

The AS4C128M8D3B-12BIN has a 64-bit data bus that allows for 32-bit, 16-bit, or 8-bit access. It also features a JTAG interface, an industry-standard IEEE 1532 boundary-scan test (BST) logic, a toggle-mode interface, and an Advanced Peripheral Bus (APB) width to maximize system management and performance.

Working Principle

The AS4C128M8D3B-12BIN operates in a synchronous mode, in which data is transferred between internal RAM circuits and the external bus in the same clock cycle. This transfer takes place when a low-to-high clock signal transition is detected by the memory.

To initiate a read or write cycle, the command register is loaded with an Instruction Address (IA) and an output enable code. The IA is passed over to the instruction decoder, which decodes the instruction and accesses the necessary data. Depending on the operation being performed, either data is read from or written to the memory.

Data cycles can be performed in either a burst or a single access mode. In single access mode, a single address is issued, and the corresponding data is read or written. In burst access mode, multiple addresses are issued in succession, and the data is read or written to multiple locations.

The AS4C128M8D3B-12BIN also utilizes a two-level cache system to speed up read and write times. This two-level cache system stores both data and address information separately and allows for faster data access.

Finally, the AS4C128M8D3B-12BIN features an on-chip advanced error detection and correction (EDC) engine that constantly monitors data read values. This is to ensure data integrity and minimize the chances of errors.

Conclusion

The AS4C128M8D3B-12BIN is a high-performance and reliable memory solution from ATMEL. It is designed to optimize power and performance in applications such as automotive infotainment systems, industrial automation, field programmable gate arrays (FPGA) and embedded systems. The device features a 64-bit data bus, JTAG interface, and a two-level cache system to quickly access data. It also has an integrated error detection and correction (EDC) engine to ensure data integrity.

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