AS4C16M32MD1-5BIN Allicdata Electronics
Allicdata Part #:

1450-1121-ND

Manufacturer Part#:

AS4C16M32MD1-5BIN

Price: $ 2.84
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 512M PARALLEL 90FBGA
More Detail: SDRAM - Mobile LPDDR Memory IC 512Mb (16M x 32) Pa...
DataSheet: AS4C16M32MD1-5BIN datasheetAS4C16M32MD1-5BIN Datasheet/PDF
Quantity: 1000
160 +: $ 2.57985
320 +: $ 2.56992
640 +: $ 2.40952
1120 +: $ 2.30698
Stock 1000Can Ship Immediately
$ 2.84
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 512Mb (16M x 32)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-FBGA (8x13)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AS4C16M32MD1-5BIN, also known as Advanced Static RAM, is a type of semiconductor memory designed to store and process data quickly and efficiently. It is widely used in embedded systems, wearable devices, and other applications where low power, high speed, and low latency are essential.

The major feature of AS4C16M32MD1-5BIN is its organization as a 4Mx16 configuration, meaning it contains 4 million bits of information in 16 rows. Each of these bits is identified as either a “1” or a “0”, enabling the device to store and transmit data in binary form. Its high data storage capacity and ability to quickly process 16-bit data makes this type of memory ideal for applications such as multiprocessor systems, medical equipment, and consumer electronics.

Additionally, this type of memory also has the capability to store data in block or page mode, allowing for a faster rate of access as well as increased efficiency. It is a self-timed device, meaning it can operate without the need for a clock signal, greatly improving power consumption in comparison to other memory technologies such as DRAM. The chip requires only a single power source, making it ideal for battery-operated and portable devices.

In terms of its working principle, the AS4C16M32MD1-5BIN operates on the basis of dynamic address decoding, whereby the memory address is decoded by the processor for each time that data is read from or written to the chip. Once the processor has decoded the address, the appropriate data is retrieved from the memory via a series of address pins. The data transfer between the processor and the memory is then facilitated by the memory\'s internal DRAM interface.

The AS4C16M32MD1-5BIN is designed to provide users with a cost-effective, energy efficient, and versatile memory solution. It is a robust and reliable technology, and can be used in a wide range of embedded systems, including medical and consumer applications.

In summary, the AS4C16M32MD1-5BIN is a highly efficient, low-power, and low-latency memory device. Its 4Mx16 configuration and ability to access data using dynamic address decoding makes it a viable option for various types of applications, particularly those that require rapid data processing and reliable performance.

The specific data is subject to PDF, and the above content is for reference

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