AS4C1M16S-6TCN

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AS4C1M16S-6TCN belongs to type of synchronous dynamic RAM (SDRAM), which is a type of memory that synchronizes itself using a clock signal. It is a random-access memory integrated circuit that storage information in a digital format. As a type of DRAM, AS4C1M16S-6TCN has a high density application field and wide data bandwidth.

Because of the synchronous design, SDRAMs can achieve greater bandwidths that exceed asynchronous DRAMs. This bring about a higher quantity of data will be accessed in the same amount of time and it can also allow for burst transfers. With the burst transfer, multiple memory locations can be accessed sequentially from the same starting address, allowing for higher bandwidth transfers.

Generally, synchronous dynamic RAMs are designed to either be assembled as a single integrated circuit package or build using several memory chips on a printed circuit board and connected together through a memory controller hub. In either structure, SDRAMs have a controller and a series of memory cells. The controller contains the means by which the memory chip is accessed and data is transferred, while the memory cells are where data is stored.

AS4C1M16S-6TCN has a 1Gb density, which is equivalent to 1024 Mb. This memory chip operates using a dual bank structure, each containing 128Mb memory cells allowing for data input or output in one clock cycle. The data bus width of the chip is 16-bits. In addition, the CAS-LATENCY is class CL6 and the clock speed for the chip is 100Mhz, which is 3x faster than the common DDR memory.

The operations of AS4C1M16S-6TCN can be divided into three main phases. The first phase, precharge, is used to prepare the memory cells for a read or write cycle. During this phase, the memory cells are precharged to a base voltage level, which is designed to give the cells a minimum amount voltage variance between each cycle. The next phase, activation, is used to select the specific memory cell that is intended to be accessed. The last phase, read/write phase, is used to transfer data to or from the currently selected cell.

AS4C1M16S-6TCN is also designed to be used as a synchronous memory device. This allows the memory device to be synchronized with the processor, enabling it to perform memory transactions at a faster rate. The frequency at which the processor operates is used as a clock for the SDRAM, which allows for a much faster transfer than asynchronous DRAMs.

The application of AS4C1M16S-6TCN is mainly used in digital systems with high data transfer speeds. It can be used in high-end servers, embedded systems, high-end gaming PCs, and laptops. The memory chip is also suitable for usage as a data buffer, cache, or other secondary storage requirement.

AS4C1M16S-6TCN is a type of DRAM that has a high density application field and wide data bandwidth. It operates using a dual bank structure and has a data bus width of 16-bits. The chip also has a 1Gb density, a CAS latency of class CL6, and a clock speed of 100Mhz. This memory chip is mainly used in digital systems that require high data transfer speeds and is suitable for usage as a data buffer, cache, or other secondary storage requirement.

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