AS4C256M16D3B-12BAN Allicdata Electronics
Allicdata Part #:

1450-1444-ND

Manufacturer Part#:

AS4C256M16D3B-12BAN

Price: $ 9.67
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 4G PARALLEL 96FBGA
More Detail: SDRAM - DDR3 Memory IC 4Gb (256M x 16) Parallel 80...
DataSheet: AS4C256M16D3B-12BAN datasheetAS4C256M16D3B-12BAN Datasheet/PDF
Quantity: 39
1 +: $ 8.79480
10 +: $ 8.14653
25 +: $ 8.03299
50 +: $ 7.93436
180 +: $ 6.95369
360 +: $ 6.65305
540 +: $ 6.60870
Stock 39Can Ship Immediately
$ 9.67
Specifications
Series: Automotive, AEC-Q100
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (256M x 16)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (13.5x9)
Description

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AS4C256M16D3B-12BAN is a type of memory device manufactured by Alliance Memory, Inc. It is a 4Mbit x 16bit x 3-bank low-power double data rate (LPDDR) SDRAM. The device is suited for a variety of applications, such as mobile phones, personal digital assistants (PDAs), digital cameras, radio transmitters, portable media players, GPS devices, and MP3 players. It is a low-power, high-performance memory device that provides fast access to data and supports multiple simultaneous accesses.

This memory device features a burst length of 4 and a burst type of sequential. The clock rate is system-synchronous, meaning that it runs at the same speed as the system, without any wait cycles. The maximum read latency is 12 and the maximum write latency is 10 cycles, meaning that data can be accessed and stored quickly. The device also supports power saving features such as Deep Power-down mode and Auto Self Refresh mode.

The AS4C256M16D3B-12BAN has a broad operating temperature range and supports the following operating conditions: 0V to 3.3V supply voltage, -40°C to 125°C temperature range, 3.2V to 3.6V internal I/O voltage, 1.8V to 2.5V command voltage, and 1.2V to 1.35V internal supply voltage.

The working principle of the AS4C256M16D3B-12BAN memory device is quite simple. It uses a synchronous dynamic random access memory (SDRAM) that operates by opening and closing a row and a column of memory cells. When a row and column are opened, data is read from the memory cells and stored in a buffer. The data can then be transferred to the system for manipulation and storage.

When the data is written to the memory cells, the row and column are opened and the data is written from the buffer to the memory cells. The data is then stored in the memory cells and can be retrieved by opening the same row and column. This entire process is repeated for each access. The device also features a number of control features such as bank select, auto-precharge, and auto-refresh.

The AS4C256M16D3B-12BAN memory device is ideal for energy efficient applications that require fast access to data. It is suitable for a wide range of embedded applications, including high-performance mobile phones, personal digital assistants (PDAs), digital cameras, radio transmitters, and portable media players. Its wide range of operating temperature, operating voltage, and current ratings make it suitable for both portable and stationary applications.

The specific data is subject to PDF, and the above content is for reference

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