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Memory: AS4C256M16D3B-12BANTR application field and working principle

AS4C256M16D3B-12BANTR is an advanced memory device of DDR3 Synchronous Dynamic Random Access Memory (SDRAM) Small-Outline Dual Inline Memory Module (SO-DIMM). It is a new-generation high-speed memory device built on advanced process, stacked architecture, and small outline packaging. This device applies to high-end applications like gaming, advanced graphics, and media streaming, and can support high-end servers and workstations.

Application Fields

AS4C256M16D3B-12BANTR is a wide-spread high-speed memory device used in multiple applications such as gaming, industrial computers, video editing, scientific computing, and audio systems. It is specially tailored with single-sided and double-sided configurations, making it ideal for ultra-thin laptop and desktop PC requirements. It has also become an essential component for manufacturers to build reliable multitasking applications for watchdog cards, industrial control, and other industrial communication sectors.

Working Principle

AS4C256M16D3B-12BANTR is known for its asynchronous memory device operation. It utilizes an asynchronous clock to control the data bus and carry out operations without relying on a single clock signal. This makes it highly flexible and versatile for different technology platforms. This device applies Phase-Locked Loop (PLL) to synchronize clocking and double-data-rate (DDR) architecture for best performance. The PLL synchronizes the data accessed, written, and read all at once, to increase speed and reduce latency. It also has an automatic data formatting module to ensure that read and write operations are performed with the highest accuracy.

AS4C256M16D3B-12BANTR utilizes 3D-stacked integrated circuits to provide customers with an advanced and efficient high-speed memory device with improved performance. It also has a multi-level data packaging method that reduces latency and maximizes memory performance. It has 10-bit On-Die-Calibration (ODC) technology that automatically adjusts to system voltage and temperature, to reduce power consumption.

Advantages

AS4C256M16D3B-12BANTR has several advantages that make it a popular choice for high-end applications. It offers superior high speed for both reading and writing, with a bandwidth of up to 1600 MB/s. This device is optimized for efficiency and reliability, with auto refresh and thermal shutdown for protection. It also has a robust design with built-in ECC support. It is built to meet health and safety standards, by protecting against ESD, EMI, and power surges. It also has a low power draw and is RoHS compliant, making it suitable for a variety of applications.

Conclusion

AS4C256M16D3B-12BANTR is a high-speed memory device designed for a wide range of advanced applications. Its advanced memory architecture, high speed, low power draw, and robust design make it an ideal choice for demanding multitasking applications. It offers excellent performance with minimal latency and power draw, and its built-in ECC support ensures reliability and safety. With its wide array of features, AS4C256M16D3B-12BANTR is well-suited for versatile applications and can satisfy all advanced memory needs.

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