AS4C256M16D3B-12BCN Allicdata Electronics
Allicdata Part #:

1450-1394-ND

Manufacturer Part#:

AS4C256M16D3B-12BCN

Price: $ 6.78
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 4G PARALLEL 96FBGA
More Detail: SDRAM - DDR3 Memory IC 4Gb (256M x 16) Parallel 80...
DataSheet: AS4C256M16D3B-12BCN datasheetAS4C256M16D3B-12BCN Datasheet/PDF
Quantity: 1633
1 +: $ 6.16770
10 +: $ 5.67441
25 +: $ 5.55660
50 +: $ 5.53707
180 +: $ 4.96731
360 +: $ 4.81669
540 +: $ 4.58092
1080 +: $ 4.42048
Stock 1633Can Ship Immediately
$ 6.78
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (256M x 16)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (13.5x9)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AS4C256M16D3B-12BCN is a type of memory, which is primarily used for mobile systems, such as mobile phones, tablets and laptops. It is a DDR3L (Double Data Rate Three Low Power) 4 Gb (512 MB) asynchronous DRAM (Dynamic Random Access Memory). DDR3L technology is an improved version of the older DDR3, offering increased power efficiency and lower operating voltages (1.35V). The device is organized as sixteen-megabytes-by-four-billion-bits, and includes two banks (A and B) of 1,024 rows and 32,768 columns.

The device operates up to an effective clock frequency of 666 MHz, with a CAS latency (CL) of 12. It provides a typical power consumption of 4.6 Watt per device, and is available in a 1443-ball package measuring 14 x 14 mm. It also provides 533MHz frequency rate and 2.5nS address access time.

The most important feature of the AS4C256M16D3B-12BCN device is its ECC (Error Correcting Code) protection, which helps ensure data accuracy, by preventing errors and corruption. The ECC architecture implemented by the device is four-bit, consisting of a two-bit parity target and two-bit ECC error shield. The ECC algorithm compensates both random single-bit and multi-bit errors, and safeguards against soft errors, by detecting and correcting any data errors that occur during a DRAM read or write operation.

As far as the device reliability is concerned, it has been designed to withstand temperatures ranging from -40°C to +85°C, and can be launched into space for satellite applications. The device offers a wide voltage range of 1.05V to 1.45V and can easily operate even with a single 3V VDD supply.

The AS4C256M16D3B-12BCN device offers numerous advantages, such as, improved power efficiency, low operating voltages, robust ECC protection and reliable operation. These features make it an ideal choice for mobile and consumer applications, where power efficiency and reliability are essential.

In conclusion, AS4C256M16D3B-12BCN offers good power efficiency, low operating voltages, robust ECC protection, and reliable operation. It is an ideal choice for mobile systems, such as mobile phones, tablets and laptops, as well as consumer applications. Its features make it an ideal choice for applications requiring reliable data protection and power efficiency.

The specific data is subject to PDF, and the above content is for reference

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