AS4C256M16D3B-12BCNTR Allicdata Electronics
Allicdata Part #:

AS4C256M16D3B-12BCNTR-ND

Manufacturer Part#:

AS4C256M16D3B-12BCNTR

Price: $ 4.56
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 4G PARALLEL 96FBGA
More Detail: SDRAM - DDR3 Memory IC 4Gb (256M x 16) Parallel 80...
DataSheet: AS4C256M16D3B-12BCNTR datasheetAS4C256M16D3B-12BCNTR Datasheet/PDF
Quantity: 1000
2000 +: $ 4.13768
Stock 1000Can Ship Immediately
$ 4.56
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (256M x 16)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (13.5x9)
Description

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The AS4C256M16D3B-12BCNTR memory module is a commonly seen memory module in many applications. It is a DRAM module which is composed of 2Gb DDR3-1600 components, making it one of the fastest DRAM devices available. In terms of power efficiency, the module can deliver highly efficient performance while using as little as 1W of power. This is hugely beneficial to some of the most energy-sensitive applications, including wearable devices and mobile phones.

The AS4C256M16D3B-12BCNTR memory module is highly suitable for system applications which demand high bandwidth, low latency, and high data throughput. It is typically used in applications such as storage, networking, and gaming, as it provides superior performance when compared to traditional DDR2 and DDR3 memory modules. Applications which are particularly suited to this memory module include high-end workstations, cloud computing, and consumer electronics.

When it comes to the working principle of this memory module, there are two main components: an array of DRAM cells and a hierarchical address decoder. The DRAM cells are what actually stores the data, while the address decoder is responsible for decoding the memory addresses. Each memory address consists of a row address, which is decoded by the decoder, and a column address, which is read from the DRAM cell array. When a valid address is provided, the DRAM cell array sends its contents back to the memory controller, after which the memory controller stores the data in the appropriate location.

In terms of the architecture of this module, it can be divided into four major sections: the RAM array, the bus structure, the address decoder, and the memory controller. The RAM array is the actual memory section of the module, which stores the data. The bus structure contains the data, control, and address lines which connect the RAM array and other components of the module. The address decoder is responsible for decoding the memory addresses, while the memory controller is responsible for controlling the data transfer between the RAM array and other components of the system.

The AS4C256M16D3B-12BCNTR memory module is an excellent choice for many system applications. It is highly efficient, reliable, and provides superior performance for many system applications. With its fast data transfer rate, low latency, and large storage capacity, it is an ideal avenue for data storage and manipulation. With its low power consumption, it is well-suited for energy-sensitive applications such as wearable devices and mobile phones.

The specific data is subject to PDF, and the above content is for reference

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