AS4C256M16D3B-12BINTR Allicdata Electronics
Allicdata Part #:

AS4C256M16D3B-12BINTR-ND

Manufacturer Part#:

AS4C256M16D3B-12BINTR

Price: $ 5.05
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 4G PARALLEL 96FBGA
More Detail: SDRAM - DDR3 Memory IC 4Gb (256M x 16) Parallel 80...
DataSheet: AS4C256M16D3B-12BINTR datasheetAS4C256M16D3B-12BINTR Datasheet/PDF
Quantity: 1000
2000 +: $ 4.59283
Stock 1000Can Ship Immediately
$ 5.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (256M x 16)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (13.5x9)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AS4C256M16D3B-12BINTR is a DDR3, 1.5V, double-data rate synchronous dynamic random access memory (SDRAM) module, with a capacity of 1.25GB and a data rate of 1600Mhz. This type of memory provides high performance for gaming, multimedia and other applications that require high data processing speeds. The memory module has a 3.2-inch aluminum printed circuit board (PCB) that is designed to optimize signal integrity and reduce power consumption.

The AS4C256M16D3B-12BINTR is composed of 256M SDRAM integrated circuit chips, which are connected via a high-speed point-to-point interface. Each chip has a separate data bus, while the I/O pins are synchronized with an external clock signal to enable data transfers at up to 1600Mhz. By utilizing the 800Mhz dual-data rate interface, this module is able to achieve up to 32GB/sec throughput.

This type of memory provides greater memory density than traditional dynamic random access memory (DRAM) and static random access memory (SRAM). DRAM and SRAM are limited to storing a single bit of data at a time, while SDRAM is able to store multiple bits of data simultaneously, allowing for faster data access. Compared to SRAM and DRAM, SDRAM is less prone to timing problems, allowing for higher data throughput and lower power consumption.

The AS4C256M16D3B-12BINTR has a wide range of applications in both professional and consumer electronics. It can be used in gaming consoles, personal computers, smartphones and tablets. It is also suitable for video editing, scientific computations, server applications, audio and video streaming and other high-performance computing tasks. The module is also suitable for applications that require low voltage operation, such as automotive and embedded systems.

The AS4C256M16D3B-12BINTR module is designed to meet JEDEC and RoHS 2.0 standards and boasts excellent compatibility with industry-standard platforms. The module features low power consumption, low heat output and a wide operating temperature range. The module is also equipped with error correction code (ECC) support, which helps to detect and correct potential memory errors.

The AS4C256M16D3B-12BINTR memory module is an ideal choice for applications that require high performance and data integrity. Its high data processing speeds make it suitable for gaming, multimedia and other applications that require intensive data processing. It is also an ideal solution for automotive and embedded systems as its low voltage operation ensures reliable operation. Furthermore, the module is compliant with industry standards and offers excellent compatibility with other hardware components.

The specific data is subject to PDF, and the above content is for reference

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