AS4C256M32MD2-18BCN Allicdata Electronics
Allicdata Part #:

AS4C256M32MD2-18BCN-ND

Manufacturer Part#:

AS4C256M32MD2-18BCN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 8G 533MHZ 134FBGA
More Detail: SDRAM - Mobile LPDDR2 Memory IC 8Gb (256M x 32) 5...
DataSheet: AS4C256M32MD2-18BCN datasheetAS4C256M32MD2-18BCN Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 8Gb (256M x 32)
Clock Frequency: 533MHz
Voltage - Supply: 1.2V, 1.8V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Description

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The AS4C256M32MD2-18BCN is a high-density, stand-alone memory device made of Static Random Access memory (SRAM). It is primarily used within the fields of communication, consumer and automotive applications. This memory device allows the users to store and access data quickly, thereby improving overall system performance.

Overall, the AS4C256M32MD2-18BCN is made up of cells, containing gates and transistors, which allow for access to the memory contents. This device is known for its low power usage and the ability to read from and write to the memory simultaneously. With these features, the AS4C256M32MD2-18BCN can provide users with enhanced performance and reliability in many different applications.

The AS4C256M32MD2-18BCN enables devices to read and write data with speeds of up to 144 megabits per second and capacities of up to 1 gigabyte. This device provides an ideal solution for applications such as network access gateways, vehicle infotainment systems, digital multimedia playback systems and router processing applications, due to the capability to store and process large amounts of data in a fraction of the time of traditional memory solutions.

The working principle of the AS4C256M32MD2-18BCN revolves around the use of transistors and read/write latches. Data is written onto the device through a write latch, and then read or stored for future use through use of the read latch. The memory is then accessed at high speeds and with high amounts of accuracy which helps to improve overall system performance. With these features, the AS4C256M32MD2-18BCN is highly desirable for both consumer and automotive applications.

Finally, the AS4C256M32MD2-18BCN offers improved power efficiency, reliability and smaller packages compared to other SRAM devices. With its versatile nature and ability to quickly process large amounts of data, this device is sure to be a popular option for many different applications. Furthermore, with its low power usage and reliability, this device is sure to remain a preferred choice among users looking to improve system performance and reliability.

The specific data is subject to PDF, and the above content is for reference

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