AS4C256M8D3-12BIN Allicdata Electronics
Allicdata Part #:

1450-1101-ND

Manufacturer Part#:

AS4C256M8D3-12BIN

Price: $ 4.41
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 2G PARALLEL 78FBGA
More Detail: SDRAM - DDR3 Memory IC 2Gb (256M x 8) Parallel 800...
DataSheet: AS4C256M8D3-12BIN datasheetAS4C256M8D3-12BIN Datasheet/PDF
Quantity: 6
1 +: $ 4.00680
10 +: $ 3.65463
25 +: $ 3.58520
50 +: $ 3.56063
100 +: $ 3.19410
Stock 6Can Ship Immediately
$ 4.41
Specifications
Series: --
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (256M x 8)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x10.5)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AS4C256M8D3-12BIN is an asynchronous static random access memory (SRAM) product manufactured by Alliance Memory. This product is typically used for a wide range of memory applications, from microcontrollers and digital signal processors (DSPs) to networking and automotive infotainment systems. Digitally controlled SRAM products, like the AS4C256M8D3-12BIN, are optimal for applications that require low power consumption and wide range of operating temperatures.

Product Description

The AS4C256M8D3-12BIN is a 4Mbit x 16-bit (256K x 16-bit) Synchronous SRAM component. It is organized as 128K words by 16-bits and has a 3.0V power supply. It features a fast random access time of 80ns and an asynchronous page mode read of 15ns. This product is shipped in a 68-pin TSOP-II package.

Application Field

The AS4C256M8D3-12BIN is ideal for applications that require power-efficient memory solutions. It is widely used for applications such as microcontroller-based products, DSPs, and embedded systems, thanks to its low-power consumption and wide range of operating temperatures. It can also be used in data communications and automotive infotainment systems because of its excellent random access time and asynchronous page mode read. Furthermore, the AS4C256M8D3-12BIN can be used in portable electronic applications and industrial automation systems, which require small form factor memory solutions.

Working Principle

The AS4C256M8D3-12BIN is an asynchronous static random access memory (SRAM) component. This product features a static DRAM macrocell and input/output buffers that are optimized for low power consumption. It operates using the asynchronous protocol, meaning that the device clock can be on or off and will still function properly. The AS4C256M8D3-12BIN enables faster read access than traditional DRAM solutions, as it stores data in a static memory cell and does not require time for a refresh cycle.

The AS4C256M8D3-12BIN is optimized for applications that require low power consumption and wide range of operating temperatures. This product has an asynchronous page mode read of 15ns and a fast random access time of 80ns, which improves performance and reduces power consumption. It also provides better EMI/EMC performance and improved signal integrity for high speed designs. In addition, this product is equipped with circuit protection features such as a watchdog timer and built-in write-protect function.

Conclusion

The AS4C256M8D3-12BIN is a 4Mbit x 16-bit (256K x 16-bit) synchronous SRAM product, perfect for applications in need of low power consumptions and wide range of temperature operations. This product offers excellent random access time and asynchronous page mode read, making it suitable for many designs such as microcontroller-based products, DSPs, data communications systems, and industrial automation networks. Furthermore, it is equipped with a write-protect function and enhanced circuit protection features, providing better EMI/EMC performance and improved signal integrity.

The specific data is subject to PDF, and the above content is for reference

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