AS4C256M8D3L-12BIN

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Memory - AS4C256M8D3L-12BIN Application Field and Working Principle

The AS4C256M8D3L-12BIN is a part of the product family of memory components from the AS4C256M8D3L series. It is a type of synchronous dynamic random-access memory (SDRAM) chips manufactured by Alliance Memory, Inc. that provides high-speed storage and retrieval operations. As a type of synchronous DRAM, the AS4C256M8D3L-12BIN memory component operates on a specific timing protocol, which is synchronized to an external clock for faster than conventional DRAM rates.

The AS4C256M8D3L-12BIN DRAM chip is composed of four banks of 4Mx8bit synchronous DRAMs with a total memory capacity of 64Mbits. It operates with a single power supply voltage (1.8V) while being suitable for a -40℃ ~ +85℃ temperature range. The operating clock frequency of the AS4C256M8D3L-12BIN can range from 5 to 66MHz, depending on the device chosen. The variations in clock frequency are due to differences in access time, power consumption and device power specifications.

The AS4C256M8D3L-12BIN is tailored towards dense, high-performance systems found in industrial, telecommunications and aerospace/defense applications.

On each cycle of the external clock, the AS4C256M8D3L-12BIN DRAM can perform a memory access. Each cycle can contain one or two operations, a read or write operation or a combination of the two. When the chip is set to the read mode, it orders a data transfer from a memory location to the address bus. When set to the write mode, it sends data from the address bus and writes it to a memory location. When a write-read or read-write cycle is used, it temporarily stores the data, then sends it out during the subsequent cycle.

The AS4C256M8D3L-12BIN DRAM chip offers a cycle time of 12ns, and includes a package of 15x15mm (QFP-48), and a power consumption of less than 1.575W during the operation. It includes various options for refresh operation, including automatic self-refresh and the ability to program periodic refreshes. Its low power consumption and fast refresh rates help reduce power consumption and deliver superior performance without sacrificing reliability.

The AS4C256M8D3L-12BIN memory component also provides error-Correcting Code (ECC) for improved data integrity. It supports up to four error-detection data frames per sector, and can detect single-bit or double-bit errors. The ECC capability safeguards data from destructive bit errors, which can occur in a variety of different types of applications, from medical imaging systems to automotive applications and even radio and television broadcasting.

The AS4C256M8D3L-12BIN DRAM chip also offers a variety of additional features, including cyclic refresh mode, device temperature monitoring, Device ID and Serial Presence Detect. The cyclic refresh mode helps extend battery life in mobile/portable applications and the temperature monitoring feature enables devices to more closely monitor temperature during operation. The Device ID and Serial Presence Detect provide a set of critical information that can be used by a wide-range of applications to control various parameters within the device.

In summary, the AS4C256M8D3L-12BIN is a type of synchronous DRAM chip that offers a superior storage and retrieval operations due to its fast operating clock frequency and low power consumption. It is suitable for a variety of dense, high-performance systems, including those used in industrial, telecommunications and aerospace/defense applications. In addition, it can detect bit errors and offers a number of features that give it greater control, flexibility and expansion capabilities.

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