AS4C256M8D3LB-12BIN Allicdata Electronics
Allicdata Part #:

AS4C256M8D3LB-12BIN-ND

Manufacturer Part#:

AS4C256M8D3LB-12BIN

Price: $ 3.92
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 2G PARALLEL 78FBGA
More Detail: SDRAM - DDR3L Memory IC 2Gb (256M x 8) Parallel 80...
DataSheet: AS4C256M8D3LB-12BIN datasheetAS4C256M8D3LB-12BIN Datasheet/PDF
Quantity: 1000
242 +: $ 3.56021
484 +: $ 3.54649
726 +: $ 3.32513
1210 +: $ 3.18363
Stock 1000Can Ship Immediately
$ 3.92
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (256M x 8)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-FBGA (10.5x8)
Description

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Memory is an essential part of any computer system, as it provides a way to store data. The AS4C256M8D3LB-12BIN is a type of random access memory (RAM) with a long list of features which make it suitable for a wide range of applications. In this article we will look at the applications for the AS4C256M8D3LB-12BIN and its working principles.

Application Fields

The AS4C256M8D3LB-12BIN is usually used in computers and laptops, but can also be used in embedded systems, gaming consoles and mobile devices. It is well-suited to systems which require high-speed access to frequently used data, as well as reliable storage of temporary data.

In discussion of the AS4C256M8D3LB-12BIN, it is important to note that it is a type of synchronous dynamic random access memory (SDRAM). This means that the memory can be synchronised with the system clock, allowing for faster access to data. As such, it is popular in systems which require fast access, such as desktop and laptop computing, server systems, and gaming consoles.

The AS4C256M8D3LB-12BIN is also well-suited for embedded systems and mobile devices. It is designed for low power consumption, and can therefore extend battery life. It also features high shock and vibration resistance, making it perfect for embedded systems which may be subjected to extreme conditions.

Working Principles

At the heart of the AS4C256M8D3LB-12BIN is a sense amplifier. This is responsible for sensing the electrical charge stored in the memory, and outputting it in an easy-to-understand digital format which the computer can use. It can also detect when the memory has been written to, and can then store the data in its own memory.

The AS4C256M8D3LB-12BIN also uses a double data rate feature. This speeds up the process of reading and writing data, as the memory can both read and write data at twice the speed of a single data rate system. It also allows multiple accesses, meaning that the memory can be used to both read and write data simultaneously.

Finally, the AS4C256M8D3LB-12BIN features error-correcting code (ECC) memory. This is critical for ensuring that important data is not lost or corrupted due to faulty memory cells. The ECC can detect and correct any errors that may occur in the memory cells, ensuring that the data stored is always consistent and reliable.

Conclusion

The AS4C256M8D3LB-12BIN is a powerful and reliable SDRAM which is well-suited to a range of applications. It features a sense amplifier, a double data rate system, and ECC memory, all of which make it a versatile and robust memory solution which can provide reliable data storage and fast access. As such, the AS4C256M8D3LB-12BIN is an ideal choice for a wide range of computing projects.

The specific data is subject to PDF, and the above content is for reference

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