AS4C2M32S-6TIN

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The AS4C2M32S-6TIN is an low power SRAM memory device, integrated in a mini package. It is ideal for applications that require both low power consumption and high performance.

The AS4C2M32S-6TIN is a static random access memory (SRAM) that supports up to 32Mb of data storage. It can be used to store and access data much faster than dynamic random access memories (DRAM). Its wide operating temperature range makes it ideal for use in general purpose embedded systems, industrial control systems, and automotive applications.

The device uses an advanced 2N+1 sense amplifier structure. It utilizes a 6T SRAM cell that has been optimized for high density, low power and long data retention time. The cell also allows for high speed operation and can run at clock frequencies up to 166MHz.

The AS4C2M32S-6TIN has an external address bus that is used for controlling the data flow in and out of the memory device. An external data bus is used to send and receive data. The memory can be divided into two 16M banks and each bank can correspond to a separate address space.

The AS4C2M32S-6TIN features a power saving mode that reduces the power consumption in standby mode by up to 70%. This allows the SRAM device to have a much lower power consumption and can further reduce the cost of manufacturing an embedded system.

The AS4C2M32S-6TIN can support both read/write and read/modify/write functionalities. It also has burst and page access modes that can reduce the number of cycles needed to access the memory. The device has an internal weak pull-up circuit to help with signal integrity.

In summary, the AS4C2M32S-6TIN is a highly reliable and cost-effective static random access memory device that is suitable for a wide range of embedded applications. With its low power consumption and high speed operation, it is an ideal choice for any demanding application. It is also suitable for industrial and automotive systems due to its wide operating temperature range.

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