
Allicdata Part #: | AS4C32M16D1A-5TANTR-ND |
Manufacturer Part#: |
AS4C32M16D1A-5TANTR |
Price: | $ 2.62 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Alliance Memory, Inc. |
Short Description: | IC DRAM 512M PARALLEL 66TSOP II |
More Detail: | SDRAM - DDR Memory IC 512Mb (32M x 16) Parallel 20... |
DataSheet: | ![]() |
Quantity: | 1000 |
1000 +: | $ 2.37753 |
Series: | Automotive, AEC-Q100 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR |
Memory Size: | 512Mb (32M x 16) |
Clock Frequency: | 200MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 700ps |
Memory Interface: | Parallel |
Voltage - Supply: | 2.3 V ~ 2.7 V |
Operating Temperature: | -40°C ~ 105°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 66-TSSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 66-TSOP II |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The AS4C32M16DIA-5TANTR is a type of 4Mx16 Dynamic Random Access Memory (DRAM) often used for embedded systems in the mobile device industry. It is optimized for low power consumption, and uses advanced battery-friendly Enhanced CMOS (E-CMOS) technology to ensure a low power draw from a single 3.3V power supply. It is ideal for space-constrained, mobile applications such as tablets, notebooks, netbooks, smartphones, and gaming devices.
The AS4C32M16DIA-5TANTR DRAM has a burst architecture where the memory controller can access data in bursts of up to four words. The device is organized into 4M eight-bit words and has sixteen banks of 256K words. The burst lengths are one, two, four and eight word sequences. The addresses (row, column, bank) are multiplexed into a single address line and presented with each burst.
The AS4C32M16DIA-5TANTR is a synchronous DRAM which needs a clock signal in order to operate. The clock signal is used to synchronize the memory operations with the processor or the system bus. The clock signal is also used to define the burst length, row address, column address and bank or page address. The rate of the clock is in nanoseconds, and can be set to values of 6, 8, 10 or 12ns.
The AS4C32M16DIA-5TANTR DRAM also features an alternate data-out that allows for the data to be read from the device without disrupting the operation of the device and without refreshing the row. This is especially useful for applications in which data needs to be continually updated, such as streaming audio.
The AS4C32M16DIA-5TANTR DRAM is a tri-state device, meaning that it can be placed in three different states: standby, active and output. In standby mode, the DRAM is inactive, and draws no power. In active mode, the DRAM can receive and process commands from the system bus. In output mode, the DRAM can output data to the system bus.
In addition, the AS4C32M16DIA-5TANTR DRAM has numerous features designed to ensure reliability, such as an auto-refresh command that refreshes the contents of the memory and an on-chip temperature sensor to detect overheating conditions. It also has an internal self-test function that can test the integrity of the memory device. The device is supported by a variety of state-of-the-art memory controllers, making it easy to integrate the AS4C32M16DIA-5TANTR DRAM into an embedded system.
The AS4C32M16DIA-5TANTR DRAM is one of the most popular DRAMs available for powering embedded systems due to its high performance, low power consumption and wide array of features. Its burst architecture makes it ideal for applications where data needs to be sent and received quickly, and its numerous reliability features ensure that it can withstand the rigors of operation in a mobile device. Whether it\'s powering a smartphone or a gaming device, the AS4C32M16DIA-5TANTR DRAM has what it takes to get the job done.
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