AS4C4M16S-6TANTR

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Memory devices are key components in today\'s communication systems and computing solutions. The AS4C4M16S-6TANTR is one such semiconductor device that offers reliable and high-performance memory solutions for these systems.

The AS4C4M16S-6TANTR belongs to the family of high-density Static RAM devices offered by Alliance Technology Group. The device is a 4 Megabit (Mbit or 4 Megabytes (MB)) synchronous SRAM that features an industry-standard 66-pin TSOP package, a 6-transistor access cell, and an 80 ns access time with a synchronous interface.

The AS4C4M16S-6TANTR is designed to provide high-performance memory products for a wide range of embedded applications including communications, consumer electronics, automotive, defense, and industrial products. It is a key component in the implementation of low power-consuming applications, as it offers low active power consumption and low standby power consumption.

In terms of application field and working principle, the AS4C4M16S-6TANTR is suitable for use in microcomputers, networking routers and switches, digital cameras, digital video recorders and digital audio devices. It is also used in other embedded systems with demanding system requirements such as those requiring high-speed data retrieval, fast page turn and wide temperature support.

The AS4C4M16S-6TANTR is based on the 6-transistor access cell and utilizes a dual port SRAM architecture. This architecture allows for simultaneous read and write operations without any delay, thus eliminating the need for page turn control to switch between read and write operations. The 6T access cell also provides fast access times, low active power and low standby power.

In terms of the access protocol, the AS4C4M16S-6TANTR employs the high-speed, synchronous single-chip Rambus memory protocol which is based on a single bus architecture with high data throughput and low latency. The device also supports a spread-spectrum clock signal which reduces the amplitude of data switching noise and enables the entire system to operate at higher speeds.

In terms of design parameters, the AS4C4M16S-6TANTR is designed with a 4 Megabit (4,194,304 bits) density, two 4K x 1K pages per bank, a 256-byte page size and 16 address lines. The device also features an access time of 80ns, a clock frequency of up to 100MHz and a cycle time of 10ns. It has an operating temperature range of -40°C to +85°C.

The AS4C4M16S-6TANTR is designed to facilitate easy design-in through a SPI (Serial Peripheral Interface) compatible interface. The interface is designed to be fast, flexible, and reliable and supports multiplexing for up to four devices. The device also features an on-die termination (ODT) technology which reduces the risk of signal degradation from noise and electromagnetic interference.

In conclusion, the AS4C4M16S-6TANTR is a reliable and high-performance memory solution for a wide range of embedded applications. It is capable of providing high-speed data retrieval, fast page turn and wide temperature support and is an ideal choice for applications that require low power consumption.

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