AS4C4M16SA-6TINTR

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The AS4C4M16SA-6TINTR is a type of dynamic random access memory (DRAM) device from Alliance Memory. It is an updated version of the DDR3-1600 DRAM device that offers increased performance and quality. This memory device is ideal for applications such as servers, networking, notebook computers, and embedded systems.

Application Fields: The AS4C4M16SA-6TINTR is designed to meet the needs of server, networking and high performance embedded system applications. It is also suitable for notebooks and desktop computers that require high performance. This memory device has high speed and low power consumption. It is also highly reliable, making it ideal for mission critical applications.

Working Principle: The AS4C4M16SA-6TINTR is a synchronous DRAM device with a 16-bit data bus and a clock rate of 1600 Mbps. It is composed of 8M-bit memory array and internal register logic which is used to perform read and write operations. The dynamic random access memory device has a wide voltage range of 1.2-1.35V and an I/O voltage range of 3.0-3.6V.

The AS4C4M16SA-6TINTR also features an on-die termination (ODT) which helps reduce its power consumption by preventing reflections on the data bus. This device is also able to provide programmable refresh cycles in order to optimize its performance and reduce power consumption.

The AS4C4M16SA-6TINTR is available in two different types of packages: the FBGA (Fine Pitch Ball Grid Array) and LFBGA (Low-Profile Fine Pitch Ball Grid Array). It has a maximum operating temperature of +95°C and a storage temperature range of -40°C to +125°C.

The AS4C4M16SA-6TINTR is an ideal choice for mission-critical applications such as servers and networking. It offers high speed, low power consumption and high reliability in a cost-effective package. This device is designed to meet the needs of the most demanding applications and is suitable for a wide range of systems.

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