AS4C4M32D1-5BIN

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Memory: AS4C4M32D1-5BIN Application Field and Working Principle

The AS4C4M32D1-5BIN is a dynamic random access memory (DRAM) based on a high-speed, low-power 64Mb CMOS technology. It is highly integrated, with a data processing capacity at least twice that of ICs with similar characteristics. With this memory being dynamic, it requires a refresh cycle of 15.625 microseconds.

The AS4C4M32D1-5BIN is packaged in an 84-pin PIO (pin in oxide) pinout that is standard for low and mid-range DRAMs. It is commonly used in applications such as routers, data centers, and restricted access networks, where speed is of the essence. It also works well for industrial or medical applications and non-volatile storage.

Working Principle

The AS4C4M32D1-5BIN uses the concept of storing a single bit in a cell. Each cell is constructed from metal insulation layers, gates, and a transistor. This “one-transistor-two-bits” cell allows data to be quickly changed. By isolating the cell from other cells, the data rate remains high.

WRAMs use a page mode architecture to allow easy access to all cells. The memory, therefore, can be accessed all in one operation, thus reducing the time it takes to move two bytes of data.

The addressing cycle of the WRAM works best for burst-mode access. That is, multiple bits can be read or written in a single operation. This allows a significantly larger amount of data to be read or written in a single cycle of memory.

The AS4C4M32D1-5BIN also uses the auto-refresh cycle, which allows the data to remain in memory without having to be constantly refreshed. This enhances memory speed, which is necessary for certain operations.

Summary

The AS4C4M32D1-5BIN is an advanced dynamic random access memory that offers superior speed and low power consumption. It is packaged in an 84-pin PIO and is frequently used in industrial and special access networks. The “one-transistor-two-bits” cell design allows rapid access, while the page mode architecture and auto-refresh cycle offer overall memory speed enhancing effects.

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