AS4C4M32S-6TCN Allicdata Electronics
Allicdata Part #:

1450-1157-ND

Manufacturer Part#:

AS4C4M32S-6TCN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 128M PARALLEL 86TSOP II
More Detail: SDRAM Memory IC 128Mb (4M x 32) Parallel 166MHz 5....
DataSheet: AS4C4M32S-6TCN datasheetAS4C4M32S-6TCN Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (4M x 32)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 2ns
Access Time: 5.5ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II
Description

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The AS4C4M32S-6TCN is a type of memory device categorized under the low-power and high-performance Synchronous Dynamic Random Access Memory (SDRAM). It is designed to operate with a 1.8V power source and has a maximum clock frequency of up to 133 MHz. This memory device has been widely used in various applications and it is popular in embedded systems and portable electronics applications. It has the advantages of low power consumption, high performance, and low cost.

The core technology of the AS4C4M32S-6TCN memory device is the 1T 4M bit synchronous architecture. This architecture is designed to ensure optimal performance and power efficiency. Its layout is also optimized for area performance. Its on-chip controller runs on a single clock edge and is able to launch memory cycle by detecting the rising and falling edges of the system clock.

The AS4C4M32S-6TCN memory device has many applications which include digital data processing, real-time multimedia streaming, networked applications, high-end gaming, mobile devices, and automotive applications. It is widely used in industrial and networking applications. In terms of performance, it is capable of delivering the fastest read and write speed without the need for any additional components or extra wiring. It offers superior performance and reliability.

The working principle of the AS4C4M32S-6TCN memory device is based on the synchronous architecture. It uses a single clock edge to launch memory cycles and detects the rising and falling edges of the system clock. The synchronous architecture ensures that it is able to provide the optimum performance while consuming minimal power. It is designed to operate at a maximum clock frequency of up to 133 MHz and it is capable of delivering the best possible performance.

The AS4C4M32S-6TCN memory device is a high-performance and low-power solution for embedded systems and portable electronics applications. Its 1T4M bit synchronous architecture ensures optimal performance and low power consumption. It offers superior performance and reliability and is widely used in many different applications. Its working principle is based on the synchronous architecture which is designed to ensure optimum performance while consuming minimal power.

The specific data is subject to PDF, and the above content is for reference

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