AS4C512M8D3-12BANTR Allicdata Electronics
Allicdata Part #:

AS4C512M8D3-12BANTR-ND

Manufacturer Part#:

AS4C512M8D3-12BANTR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 4G PARALLEL 78FBGA
More Detail: SDRAM - DDR3 Memory IC 4Gb (512M x 8) Parallel 800...
DataSheet: AS4C512M8D3-12BANTR datasheetAS4C512M8D3-12BANTR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q100
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (512M x 8)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (9x10.5)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AS4C512M8D3-12BANTR is a memory device manufactured by Alliance Memory. It is a fast low power 512Mb mobile DDR SDRAM. This memory device is an upgrade from the older DDR SDRAMs, providing improved speed and performance. It can also be used in a wide range of applications, from mobile phones to servers. The device has been designed with an innovative architecture that provides high speed, low power consumption, and dynamic refresh.

AS4C512M8D3-12BANTR is a perfect addition to mobile phone, portable device, and other systems that require high performance and low power consumption. It is designed and optimized to support rich graphics, video, and audio applications. The device supports speeds up to 833MHz with a CAS latency of 3. It also features on-die termination (ODT) and dynamic power management (DPM) which reduces power consumption. Furthermore, it offers an industry-leading refresh cycle time of 6us.

The AS4C512M8D3-12BANTR is suitable for embedded and industrial applications. It has been designed to withstand wide range operating temperatures, making it perfect for applications in harsh environmental conditions. The device is suitable for use in automotive, avionics, defense, industrial and medical applications. The on-die ECC support provides data integrity for mission-critical applications.

The working principle of AS4C512M8D3-12BANTR is based on the synchronous dynamic random access memory (SDRAM) architecture. It consists of multiple arrays of memory cells arranged in a rectangular grid. When data is written to the cells, the SDRAM controller sends commands to the device to tell it where to store the data. The device then reads the data and stores it in the desired location. When the data is read, the device sends the data back to the controller.

The AS4C512M8D3-12BANTR is a highly reliable and robust memory device. It offers excellent performance in terms of speed and power efficiency. The device is also suitable for a wide range of applications including embedded, automotive, avionics, industrial, and medical systems. The device’s on-die ECC support ensures data integrity in mission-critical applications.

The specific data is subject to PDF, and the above content is for reference

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