AS4C512M8D3LB-12BCN

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Memory is an essential component when it comes to computing. The AS4C512M8D3LB-12BCN is a type of dynamic random access memory (DRAM), specifically part of the DDR2 SDRAM family, offering 512 megabits of storage with 8-bit data width. The AS4C512M8D3LB-12BCN allows for efficient storage of data and is engineered for reliable, high-speed performance and low power consumption.

Application Field

The AS4C512M8D3LB-12BCN is primarily used in the embedded systems and server markets, along with the personal computer and mobile markets. Because of its small form factor and power efficiency, this DRAM is ideal for use in mobile devices. The DRAM’s high speed capability makes it suitable to be used in desktop as well as performance-focused laptop systems. Servers also benefit from its high-density, low-voltage designs.

Working Principle

The AS4C512M8D3LB-12BCN works on the principle of dynamic random access memory (DRAM), where the data is stored in capacitors. When a capacitor is charged with what is known as a “bit” of 1, the electric field is strong enough to hold the charge, representing the 1 bit. When the capacitor is discharged, it holds a 0 bit. The memory refresh rate, or speed at which the capacitors are recharged and discharged, is known as clock speed. The AS4C512M8D3LB-12BCN has a clock speed of 800MHz.

The AS4C512M8D3LB-12BCN utilizes an 8-bit data width, meaning that it processes and stores data 8-bits at a time. Data is called in and out of memory using buses, which are composed of a set of electrical lines or wires. The AS4C512M8D3LB-12BCN has an 8-bit wide bus, meaning that 8-bits of data are read at a time. This also means that the memory can transfer 8-bits of data per clock.

The AS4C512M8D3LB-12BCN also has an output register, which is a set of pins that allow the memory to communicate with other components. The output register is responsible for controlling the data flow both in and out of the memory. It also helps to determine the memory’s timing signals, which are used to control the memory’s read and write functions.

The AS4C512M8D3LB-12BCN also utilizes a set of controllers, which are responsible for carrying out the operations of the DRAM, including performing operations such as pre-fetching and prefetching of data. The controller also serves to provide power and timing control to the DRAM. The controllers on the AS4C512M8D3LB-12BCN are designed for low-power and reliability.

The AS4C512M8D3LB-12BCN is also capable of Error Correction Code (ECC), which helps to detect and correct any errors that may occur during the transmission or storage of data. ECC helps to ensure that data integrity is maintained, and it is an essential feature of modern memory technologies.

In conclusion, the AS4C512M8D3LB-12BCN is a type of DRAM with 512 megabits of storage and 8-bit data width that is well-suited to be used in a range of applications. It features multiple components including an output register, controllers, and ECC to ensure high-speed performance and reliable data storage. The AS4C512M8D3LB-12BCN is ideally suited for use in the embedded systems, server, personal computer, and mobile markets.

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