AS4C512M8D3LB-12BCNTR Allicdata Electronics

AS4C512M8D3LB-12BCNTR Integrated Circuits (ICs)

Allicdata Part #:

AS4C512M8D3LB-12BCNTR-ND

Manufacturer Part#:

AS4C512M8D3LB-12BCNTR

Price: $ 5.10
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 4G PARALLEL 78FBGA
More Detail: SDRAM - DDR3L Memory IC 4Gb (512M x 8) Parallel 80...
DataSheet: AS4C512M8D3LB-12BCNTR datasheetAS4C512M8D3LB-12BCNTR Datasheet/PDF
Quantity: 1000
2500 +: $ 4.63420
Stock 1000Can Ship Immediately
$ 5.1
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (512M x 8)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-FBGA (10.5x9)
Description

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AS4C512M8D3LB-12BCNTR is an efficient and widely used type of memory. It is built with a 12B Cellular Non-Volatile Technology that improves its power, performance and capacity in a small size package. It is widely used for storing photo and video data, audio data and other high-speed data in consumer electronics.

The AS4C512M8D3LB-12BCNTR is an Non-Volatile Memory (NVM). It is a type of memory that stores data even if power is interrupted. This type of memory allows data to remain stable even during power outages or crashes. The technology used in AS4C512M8D3LB-12BCNTR is the Cell NVM (CNVM) which is best suited for use in consumer electronics devices. It requires less power consumption and is designed to offer higher speed and better write/read performance than flash memories.

AS4C512M8D3LB-12BCNTR is perfect for use in consumer electronics because it offers large capacities and is reliable. It is ideal for use in multimedia applications such as digital cameras, music players, gaming consoles, and other mobile devices. In addition, AS4C512M8D3LB-12BCNTR also supports extended data retention times, allowing data to be stored for an extended period of time.

The working principle of AS4C512M8D3LB-12BCNTR can be divided into two main components: the Memory and the Control Electronics (CE). The Memory is divided into two parts, the memory array and the memory controller. The memory array is composed of blocks configured with rows of cells. Each cell stores one bit of information. The Memory controller manages each row and its associated cells, controls data input and output, and handles read, write, erase and other functions.

The CE portion is responsible for communicating with the Memory Controller and handling the power management and timing of the memory array. The CE portion is composed of logic and registers used for memory configuration and communications. It is responsible for connecting the memory controller with the outside world. It consists of various termination resistors, de-boost capacitors, ground capacitors, and voltage regulators.

AS4C512M8D3LB-12BCNTR is a reliable, efficient, and high-capacity memory solution for consumer electronics. It is highly durable and has low power consumption, making it ideal for use in multimedia applications and other mobile devices. Its patented 12B CNVM technology offers high speeds and enhanced write/read performance, as well as extended data retention times. With its reliable and powerful technology, AS4C512M8D3LB-12BCNTR provides an effective and useful solution for storing large amounts of multimedia data.

The specific data is subject to PDF, and the above content is for reference

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