AS4C64M16D1-6TCNTR Allicdata Electronics
Allicdata Part #:

AS4C64M16D1-6TCNTR-ND

Manufacturer Part#:

AS4C64M16D1-6TCNTR

Price: $ 11.66
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 1G PARALLEL 66TSOP II
More Detail: SDRAM - DDR Memory IC 1Gb (64M x 16) Parallel 166M...
DataSheet: AS4C64M16D1-6TCNTR datasheetAS4C64M16D1-6TCNTR Datasheet/PDF
Quantity: 1000
1000 +: $ 10.59840
Stock 1000Can Ship Immediately
$ 11.66
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 1Gb (64M x 16)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Memory Interface: Parallel
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP II
Description

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Memory is an integral part of any digital system as it serves as a data repository and operation buffer or work area. The AS4C64M16D1-6TCNTR, which is a DDR4 SDRAM, is a dynamic random access memory integrated circuit typically used in computers and other digital electronic devices. It is the most commonly used work area memory in those devices and typically lives inside the system memory architecture, where it is connected to the CPU, performing quick reads and writes.

This type of memory controllers is used to manage the memory subsystems and handle the I/O operations, while also providing a high speed of data throughput. The AS4C64M16D1-6TCNTR DDR4 SDRAM is used to consume less power, feature high data transfer speeds, provide faster access times and is also used for short-term or temporary data storage. The memory works on following principles:

1. The read/write operations are initiated through control signals represented in bits, that are then latched at the input of the memory.
2. The user enables the bank to be activated by applying a row address to the address inputs A0-A13.
3.The user further selects the specific column address to be accessed within that row, using address inputs A0-A11.
4. The column addresses can be incremented or decremented by setting the address increment/decrement controls bit and then entering the reset/enable precharge command.
5. These commands are used to control the data being written in the memory address location and read from the memory address location.
6. Data from the stored address is made available through the registered data output pins, these pins are updated with new data after each cycle is complete

The AS4C64M16D1-6TCNTR, due to its features and high performance, is ideally suited for application areas such as modern digital systems, large-scale computing, gaming consoles, automotive, wireless technology and educational equipment.

In addition to having a wide range of applications, the AS4C64M16D1-6TCNTR also meets all relevant standards such as JEDEC and HBM. The DDR4 SDRAM also offers several key benefits such as high speed of data transfer, low power consumption, fast access times and higher memory density. The memory also supports an energy efficient burst transfer sequence, which is important for the efficient use of energy.

In conclusion, the AS4C64M16D1-6TCNTR is a versatile memory type, suitable for a range of applications. This type of memory offers several benefits such as a high data transfer speed, low power consumption, fast access times, higher memory density and efficient use of energy. Additionally, this type of memory meets relevant standards and offers reliable operation for life in digital systems.

The specific data is subject to PDF, and the above content is for reference

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