AS4C64M16D3B-12BIN Allicdata Electronics
Allicdata Part #:

AS4C64M16D3B-12BIN-ND

Manufacturer Part#:

AS4C64M16D3B-12BIN

Price: $ 3.06
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 1G PARALLEL 96FBGA
More Detail: SDRAM - DDR3 Memory IC 1Gb (64M x 16) Parallel 800...
DataSheet: AS4C64M16D3B-12BIN datasheetAS4C64M16D3B-12BIN Datasheet/PDF
Quantity: 1000
190 +: $ 2.78622
380 +: $ 2.77551
570 +: $ 2.60228
1140 +: $ 2.49154
Stock 1000Can Ship Immediately
$ 3.06
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gb (64M x 16)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (13x9)
Description

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Memory

AS4C64M16D3B-12BIN is a type of medium-power static RAM device (SRAM). It is widely used in fields such as embedded systems, medical equipment, communications, and data storage. The AS4C64M16D3B-12BIN SRAM has excellent performance and offers reliable operation, making it an ideal choice for various application scenarios.

The AS4C64M16D3B-12BIN is a 64M-bit synchronous SRAM device with a 4-bit I/O. Its features include low power consumption, high data rate, fast access time, and low operating voltage. The device provides a variety of operating frequencies, such as 150MHz, 200MHz, and 250MHz, making it suitable for a variety of high-speed applications.

The AS4C64M16D3B-12BIN has a very simple structure, consisting of two main two functional parts, the memory array and the control logic. The memory array consists of 256Kx256 columns, with each column having 64 bits which can store data. The column address is generated from the external address bus by the address decoder and forwarded to the memory array. The control logic then reads/writes the data from/to the memory array, based on the control signals from the external bus. The control signals consist of Read, Write and Chip Select.

In Read operations, the address is first decoded and forwarded to the memory array. Then it reads the data from the corresponding memory cell, and finally sends it back to the external bus. Similarly, in Write operations, the address is decoded, and the data is written to the corresponding memory cell, with the help of the control signals.

The AS4C64M16D3B-12BIN is widely used in embedded systems due to its robustness and performance. Its low-power consumption and low operating voltage make it well suited for low-power applications. Its high speed and wide variety of operating frequencies make it suitable for high-speed data processing and storage. Its excellent reliability makes it suitable for applications where data integrity and reliability are critical, such as medical equipment and communications systems.

In conclusion, the AS4C64M16D3B-12BIN is an ideal choice for various application scenarios and provides excellent performance, low power consumption, and reliable operation. It can be used for various applications such as embedded systems, medical equipment, communications, and data storage.

The specific data is subject to PDF, and the above content is for reference

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