AS4C64M16D3LA-12BCNTR Allicdata Electronics
Allicdata Part #:

AS4C64M16D3LA-12BCNTR-ND

Manufacturer Part#:

AS4C64M16D3LA-12BCNTR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 1G PARALLEL 96FBGA
More Detail: SDRAM - DDR3L Memory IC 1Gb (64M x 16) Parallel 80...
DataSheet: AS4C64M16D3LA-12BCNTR datasheetAS4C64M16D3LA-12BCNTR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gb (64M x 16)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-VFBGA
Supplier Device Package: 96-FBGA (13x8)
Description

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The development of semiconductor devices and chips has enabled the advancement of data processing technology. The AS4C64M16D3LA-12BCNTR is a memory device that is widely used across many different applications and is an important part of many computer systems. In this article, we will discuss the application fields and workings principle of AS4C64M16D3LA-12BCNTR memory.

The AS4C64M16D3LA-12BCNTR memory is a 64Mbit, high-speed low power static random access memory (SRAM) device. It was developed by Alliance Memory and has a supply voltage of 1.8 V to 3.6 V. This memory device has a minimum access time of 12 ns and features an asynchronous write cycle time of 45 ns. It is available in packages ranging from 16-pin options to 104-pin packages.

The AS4C64M16D3LA-12BCNTR memory has a wide range of applications. It is used in consumer electronics such as digital TV, smartphones, tablets and other portable devices. It is also commonly used in automotive systems, GPS navigation systems, robot controllers, industrial systems, and embedded systems. This memory device is a good choice for applications that require low power consumption and fast data transfer rate.

The AS4C64M16D3LA-12BCNTR memory device is based on static random access memory (SRAM) technology. This technology uses a flip-flop circuit to store each bit of data. The flip-flop circuit is made up of four transistors and cross-coupled inverters. It stores the data in two internal nodes, known as bit lines. The memory chip is made up of many of these SRAM cells, each one responsible for storing one bit of data.

The data in the SRAM cells is read and written through sense amplifiers. The sense amplifiers detect differences in the voltage levels of the bit lines, which indicate either a 0 or a 1. The sense amplifiers then interpret this difference, which allows the memory to be read and written.

The AS4C64M16D3LA-12BCNTR memory device offers some important benefits. It is a low power consuming memory device, offering up to 40% decrease in power consumptions when compared to conventional devices. It also offers fast data transfer rates, increasing the speed of any application it is used in.

Overall, the AS4C64M16D3LA-12BCNTR memory device is a reliable and efficient memory device. It is used in many different applications and offers some important benefits. It’s based on the SRAM technology, which uses flip-flop circuits and sense amplifiers to store and read data. This makes the AS4C64M16D3LA-12BCNTR a great choice for any application that requires fast data transfer and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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